Silvaco simulation software was used to study the influence of applied bias on the energy band of field-assisted GaSb/GaAs photocathode under different thicknesses and p-type doping concentrations of GaAs emission layer. The simulation results demonstrated that only 2V applied bias voltage can perfectly eliminate the barrier at the heterojunction interface and will not cause a large dark current when the GaSb layer was p-type with the doping concentration of 1×1019 cm-3 and the GaAs emission layer was gradient doping. The GaAs emitting layer with gradient doping consists of a GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1016 cm-3, GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1017 cm-3, and GaAs layer with a thickness of 0.2 μm and a doping concentration of 1×1018 cm-3. This simulation study provides theoretical guidance for the preparation of field-assisted GaSb/GaAs photocathode.
Different causes of similar view defects of ion barrier MCP were studied. Select ion barrier MCP with dark spots and bright spots. By analyzing its view and its own quality during operation, the different causes of the similar view defects of the ion barrier MCP were obtained. The analysis leads to solutions for different defects, which have a very positive effect on the improvement of the view of image intensifier.
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