Understanding the metal oxide resist and underlayer interaction for EUV lithography

Sudha Rathi; Bharati Neelamraju; Rajaram Narayanan; Shuchi Ojha; Abdul Aziz Khaja; Prashant Kulshreshtha; Praket Jha; Harry Whitesell; Karthik Janakiraman; Peiqi Wang; Larry Gao; Nancy Fung; Yung-Chen Lin

doi:10.1117/12.2658562

30 April 2023 Understanding the metal oxide resist and underlayer interaction for EUV lithography

Sudha Rathi, Bharati Neelamraju, Rajaram Narayanan, Shuchi Ojha, Abdul Aziz Khaja, Prashant Kulshreshtha, Praket Jha, Harry Whitesell, Karthik Janakiraman, Peiqi Wang, Larry Gao, Nancy Fung, Yung-Chen Lin

Author Affiliations +

Proceedings Volume 12498, Advances in Patterning Materials and Processes XL; 124980P (2023) https://doi.org/10.1117/12.2658562
Event: SPIE Advanced Lithography + Patterning, 2023, San Jose, California, United States

Abstract

Wafer backside particles is one of the issues in the IC manufacturing process that has been extensively investigated through the past decades, especially on immersion systems. However, as the technology nodes continue to scale down and we are approaching the high NA EUV lithography era, backside contamination control remains to be very important. To anticipate these upcoming challenges, SCREEN has developed a sophisticated track-integrated backside cleaning (BSC) module on the DT-3000 system, which offers an advanced post-coating BSC solution before exposure. Together with imec and ASML, we investigate the potential of this unique BSC process to guarantee the lithographic performance of EUV material stacks. This is done by correlating the backside contamination with frontside patterning performance before and after minimizing the number of scanner-focus spots. With this approach, we try to identify, characterize, and eliminate potential backside defects that could cause not only yield loss, but also physically deteriorate the scanner wafer table (WT) and hence its lifetime.

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Sudha Rathi, Bharati Neelamraju, Rajaram Narayanan, Shuchi Ojha, Abdul Aziz Khaja, Prashant Kulshreshtha, Praket Jha, Harry Whitesell, Karthik Janakiraman, Peiqi Wang, Larry Gao, Nancy Fung, and Yung-Chen Lin "Understanding the metal oxide resist and underlayer interaction for EUV lithography", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980P (30 April 2023); https://doi.org/10.1117/12.2658562

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KEYWORDS

Extreme ultraviolet lithography

Metals

Oxides

Line width roughness

Plasma enhanced chemical vapor deposition

Etching

Extreme ultraviolet

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