Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Qian Ding; Pengyan Wen; Bernd Gotsmann; Kirsten E. Moselund; Andreas Schenk

doi:10.1117/12.2620298

25 May 2022 Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode

Qian Ding, Pengyan Wen, Bernd Gotsmann, Kirsten E. Moselund, Andreas Schenk

Proceedings Volume 12148, Integrated Photonics Platforms II; 121480E (2022) https://doi.org/10.1117/12.2620298
Event: SPIE Photonics Europe, 2022, Strasbourg, France

Abstract

Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-InP pin-diode fabricated at IBM-Research Zurich. From transport study, two types of defects are found to be very likely present in the studied device: (i) positive oxide charges close to the interface between III-V materials and top oxide layer and (ii) electron-type traps at the p-InP/i-InGaAs interface. Thermal simulations show that the presence of electron-type traps at the p/i interface enhances the self-heating in the device

Conference Presentation

Citation Download Citation

Qian Ding, Pengyan Wen, Bernd Gotsmann, Kirsten E. Moselund, and Andreas Schenk "Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode", Proc. SPIE 12148, Integrated Photonics Platforms II, 121480E (25 May 2022); https://doi.org/10.1117/12.2620298

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