This work demonstrates the high-sensitive terahertz (THz) detector based on topological semimetal platinum telluride (PtTe2). The device shows broad THz frequency (0.1-0.5 THz) detection capability even under the self-driven mode. The thin PtTe2 film is grown by direct tellurization of the sputtered platinum film on the high-resistivity silicon substrate using the chemical vapor deposition (CVD) method. Furthermore, the device exhibits responsivity of 29.2 and 63.1 mA/W at 0.1 and 0.4 THz, respectively, at zero bias voltage. These responsivity values increase to 47 and 82.8 mA/W, respectively, under 200 mV bias voltage. The significant attributes of these devices are the high responsivity, self-driven operation mode, easy fabrication process, and broadband response incurred in the simple device structure.
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