Submicron Single-Layer Lithography Using Reactive Ion Etching

George R. Misium; Cesar M. Garza; Monte A. Douglas; Cecil J. Davis; Robert R. Doering

doi:10.1117/12.978044

30 January 1990 Submicron Single-Layer Lithography Using Reactive Ion Etching

George R. Misium, Cesar M. Garza, Monte A. Douglas, Cecil J. Davis, Robert R. Doering

Proceedings Volume 1185, Dry Processing for Submicrometer Lithography; (1990) https://doi.org/10.1117/12.978044
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

This paper describes the application of reactive ion etching to submicron single-layer lithography. It is shown that the etch selectivity of silicon containing resists is a strong function of the ion energy; that is, the selectivity increases for low ion energies. That supports the use of magnetically enhanced ion etchers for the development of single-layer silylated photoresists since the ion energy in these reactors is low for most process conditions. This paper shows that by a proper design of the reactor and the process good selectivity can also be achieved in a reactive ion etcher. This allows for the use of a simple reactor for some dry-develop lithography applications. The conditions leading to good selectivity as well as several submicron applications are described in this paper.

Citation Download Citation

George R. Misium, Cesar M. Garza, Monte A. Douglas, Cecil J. Davis, and Robert R. Doering "Submicron Single-Layer Lithography Using Reactive Ion Etching", Proc. SPIE 1185, Dry Processing for Submicrometer Lithography, (30 January 1990); https://doi.org/10.1117/12.978044

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