Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector

Hyun Chul Jung; Ko Ku Kang; Seong Min Ryu; Tae Hee Lee; Jong Gi Kim; Jun Ho Eom; Young Chul Kim; Ahreum Jang; Hyun Jin Lee; Young Ho Kim; Han Jung; Sun Ho Kim; Jong Hwa Choi

doi:10.1117/12.2588043

12 April 2021 Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector

Hyun Chul Jung, Ko Ku Kang, Seong Min Ryu, Tae Hee Lee, Jong Gi Kim, Jun Ho Eom, Young Chul Kim, Ahreum Jang, Hyun Jin Lee, Young Ho Kim, Han Jung, Sun Ho Kim, Jong Hwa Choi

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Proceedings Volume 11741, Infrared Technology and Applications XLVII; 117411V (2021) https://doi.org/10.1117/12.2588043
Event: SPIE Defense + Commercial Sensing, 2021, Online Only

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Abstract

The deep mesa process for pixel isolation with ICP-RIE (Inductively Coupled Plasma – Reactive Ion Etching) was studied to develop InAs/GaSb type-Ⅱ superlattice (T2SL) LWIR photodetector with nBn structure. To reduce the lateral diffusion current component of the dark current components, it is essential to accomplish a proper deep dry etching process that can completely isolate absorption layer. In this work, ICP-RIE dry etching was studied to implement the smooth, vertical and isolated pixels. By increasing substrate temperature and adjusting the ratio of Ar in BCl₃/Ar gas, it was found that the etch rate was largely increased and mesa shpae has become perpendicular and smooth. It was also found that dark current density was increased as the surface roughness increased. For the best sufrgace roughness, the dark current density of 15 μm pitch device fabricated exhibited 4.92x10^-6 A/cm² at and applied bias of -0.1 V and a temperature of 80 K.

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Hyun Chul Jung, Ko Ku Kang, Seong Min Ryu, Tae Hee Lee, Jong Gi Kim, Jun Ho Eom, Young Chul Kim, Ahreum Jang, Hyun Jin Lee, Young Ho Kim, Han Jung, Sun Ho Kim, and Jong Hwa Choi "Investigation of ICP dry etching of InAs/GaSb type-II superlattice LWIR photodetector", Proc. SPIE 11741, Infrared Technology and Applications XLVII, 117411V (12 April 2021); https://doi.org/10.1117/12.2588043

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