Investigating the gate oxide in ultrathin, hybrid gate dielectrics for low-voltage organic thin-film transistors using atom probe tomography

Rachana Acharya; Hagen Klauk; Helena Solodenko; Guido Schmitz

doi:10.1117/12.2568398

20 August 2020 Investigating the gate oxide in ultrathin, hybrid gate dielectrics for low-voltage organic thin-film transistors using atom probe tomography

Rachana Acharya, Hagen Klauk, Helena Solodenko, Guido Schmitz

Author Affiliations +

Proceedings Volume 11476, Organic and Hybrid Field-Effect Transistors XIX; 114760E (2020) https://doi.org/10.1117/12.2568398
Event: SPIE Organic Photonics + Electronics, 2020, Online Only

Abstract

Ultrathin, oxygen-plasma-grown aluminum oxide layers form high-quality gate oxides in hybrid gate dielectrics for low-voltage organic thin-film transistors. In this work, we have investigated the materials properties of the AlOx layer, such as the thickness and the composition, using the techniques of high-resolution transmission electron microscopy and atom probe tomography to get atomic scale resolution information. We correlate these materials properties with the superior dielectric properties of the plasma-grown AlOx layer and the performance of AlOx-based hybrid gate dielectrics for organic TFTs.

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Rachana Acharya, Hagen Klauk, Helena Solodenko, and Guido Schmitz "Investigating the gate oxide in ultrathin, hybrid gate dielectrics for low-voltage organic thin-film transistors using atom probe tomography", Proc. SPIE 11476, Organic and Hybrid Field-Effect Transistors XIX, 114760E (20 August 2020); https://doi.org/10.1117/12.2568398

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KEYWORDS

Dielectrics

Oxides

Chemical species

Transistors

Thin films

Tomography

Oxygen

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