Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at
low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V,
drain current on-to-off ratios of ~ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation
mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature.
Significant challenges remain, including improving the stability of the devices under bias, lowering the operating
voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of
flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on
very large areas.
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