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Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
Seung Hee Lee,Seokho Moon,Hokyeong Jeong,Dong Yeong Kim, andJong Kyu Kim
"Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing", Proc. SPIE 11466, UV and Higher Energy Photonics: From Materials to Applications 2020, 1146604 (21 August 2020); https://doi.org/10.1117/12.2570856
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Seung Hee Lee, Seokho Moon, Hokyeong Jeong, Dong Yeong Kim, Jong Kyu Kim, "Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing," Proc. SPIE 11466, UV and Higher Energy Photonics: From Materials to Applications 2020, 1146604 (21 August 2020); https://doi.org/10.1117/12.2570856