Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview

G. W. Yoon; Jin-ha Kim; Unnikrishnan Sreenath; Dim-Lee Kwong

doi:10.1117/12.167329

15 February 1994 Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview

G. W. Yoon, Jin-ha Kim, Unnikrishnan Sreenath, Dim-Lee Kwong

Author Affiliations +

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167329
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Rapid thermal chemical vapor deposition (RT-CVD) technology is strategically important for deep submicron ULSI manufacturing because of trends towards reduced thermal budget and tightened process control requirements on large diameter Si wafers, and has thus received considerable attention. In this paper, we will review the significant benefits provided by a novel in-situ multi-processing RT-CVD for IC manufacturing and the considerable progress made in developing RT-CVD as a integrated processing module capable of meeting the stringent requirements of ULSI device fabrication.

Citation Download Citation

G. W. Yoon, Jin-ha Kim, Unnikrishnan Sreenath, and Dim-Lee Kwong "Recent developments in RT-CVD technology for ULSI material processing and device fabrication: an overview", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167329

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