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21 August 2020 Internal electric fields in multilayer MoS2/WS2 heterostructures on Al2O3 substrates
Bora Kim, Po-Cheng Tsai, Jayeong Kim, Soyeong Kwon, Seokhyun Yoon, Shih-Yen Lin, Dong-Wook Kim
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Proceedings Volume 11465, Low-Dimensional Materials and Devices 2020; 1146510 (2020) https://doi.org/10.1117/12.2566689
Event: SPIE Nanoscience + Engineering, 2020, Online Only
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Abstract
We fabricated stand-alone trilayers (3L) and their heterostructures of MoS2 and WS2 on Al2O3 substrates. In particular, two kinds of heterostructures with different stacking sequences (i.e., 3L-MoS2/3L-WS2 and 3L-WS2/3L-MoS2) were prepared for comparison. The light-induced surface potential change suggested that the internal electric field along the thickness direction was present in the stand-alone (MoS2 and WS2) and heterostructure samples. Relative peak shifts of the Raman spectra supported the presence of the internal field in our samples. Physical origins to induce the internal electric field will be discussed in the presentation.
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Bora Kim, Po-Cheng Tsai, Jayeong Kim, Soyeong Kwon, Seokhyun Yoon, Shih-Yen Lin, and Dong-Wook Kim "Internal electric fields in multilayer MoS2/WS2 heterostructures on Al2O3 substrates", Proc. SPIE 11465, Low-Dimensional Materials and Devices 2020, 1146510 (21 August 2020); https://doi.org/10.1117/12.2566689
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KEYWORDS
Heterojunctions
Multilayers
Microscopy
Raman spectroscopy
Thin films
Transition metals
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