Development of a photon-counting near-fano-limited x-ray CMOS image sensor for THESEUS' SXI

Julian Heymes; Konstantin Stefanov; Matthew Soman; Davide Gorret; David Hall; Kyriaki Minoglou; David Morris; Jérôme Pratlong; Thibaut Prod'homme; Georgios Tsiolis; Andrew Holland

doi:10.1117/12.2560162

13 December 2020 Development of a photon-counting near-fano-limited x-ray CMOS image sensor for THESEUS' SXI

Julian Heymes, Konstantin Stefanov, Matthew Soman, Davide Gorret, David Hall, Kyriaki Minoglou, David Morris, Jérôme Pratlong, Thibaut Prod'homme, Georgios Tsiolis, Andrew Holland

Author Affiliations +

Proceedings Volume 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX; 114540I (2020) https://doi.org/10.1117/12.2560162
Event: SPIE Astronomical Telescopes + Instrumentation, 2020, Online Only

Abstract

THESEUS (Transient High Energy Sky & Early Universe Surveyor) is one of the three candidates for the M5 mission of the European Space Agency. The favoured mission will be announced in 2021 for an expected launch in 2032. THESEUS will be equipped with a Soft X-ray Imager (SXI) composed of a set of two telescopes using micro-pore optics offering an overall field of view of 0.5 sr (<2’ accuracy) for X-ray energies between 300 eV and 5 keV. The focal plane of each SXI telescope has a 16 x 16 cm² cooled detector area. However, the limited radiator accommodation on the spacecraft prohibits the use of CCDs since cooling the focal planes to an optimal temperature for radiation hardness (<-100 ◦C) is not feasible. Therefore, the development of a suitable CMOS Image Sensor (CIS), capable of handling the expected levels of radiation at higher operating temperatures (approximately -30 ◦C) has been proposed. To demonstrate the performance required for the THESEUS SXI detector, a 2 x 2 cm² prototype is under development using Open University pixel designs in a Teledyne-e2v digital CMOS platform. The pixel design will allow full depletion over silicon thickness of 35 µm for optimal soft X-ray quantum efficiency and instrument background suppression, and will be capable of near-Fano-limited spectral resolution that will also be of prime interest for synchrotron and Free Electron Lasers (FEL) applications. In this paper, we will present the design considerations and simulations leading to the implemented structures complying with THESEUS’ SXI requirements.

Conference Presentation

Citation Download Citation

Julian Heymes, Konstantin Stefanov, Matthew Soman, Davide Gorret, David Hall, Kyriaki Minoglou, David Morris, Jérôme Pratlong, Thibaut Prod'homme, Georgios Tsiolis, and Andrew Holland "Development of a photon-counting near-fano-limited x-ray CMOS image sensor for THESEUS' SXI", Proc. SPIE 11454, X-Ray, Optical, and Infrared Detectors for Astronomy IX, 114540I (13 December 2020); https://doi.org/10.1117/12.2560162

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available