Presentation + Paper
20 March 2020 Novel on-product focus metrology for EUV enabling direct focus monitoring and control for EUV systems
Author Affiliations +
Abstract
In order to meet the tightened lithography performance requirement for EUV systems, a good on-product focus control with accurate metrology is essential. In this manuscript we report on a novel metrology solution for the EUV on-product focus measurement using YieldStar. The new metrology has been qualified on the Logic product wafers and when combined with the advanced techniques and algorithm shows a performance that is accurate and precise enough to meet EUV requirements. Furthermore, the new methodology provides the opportunity for on-product focus monitoring and control through different scanner interfaces. Here we present a case in which the Imaging Optimizer using the EUV metrology data shows an improvement of over 20% on the focus uniformity.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Inbeom Yim, Koshiba Dakeshi, Chan Hwang, Seung Yoon Lee, Jeongjin Lee, Joonsoo Park, Jenny Yueh, Ali Ghavami, Bart Segers, Miguel Garcia Granda, Yutao Gui, Eric Janda, Frank Staals, Se-Hui Lee, Seung-Bin Yang, Yoon-Tae Lee, Se-Ra Jeon, Daniel Park, Ewoud van West, and Elliott McNamara "Novel on-product focus metrology for EUV enabling direct focus monitoring and control for EUV systems", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251U (20 March 2020); https://doi.org/10.1117/12.2553246
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KEYWORDS
Metrology

Extreme ultraviolet

Semiconducting wafers

Control systems

Scanners

Deep ultraviolet

Extreme ultraviolet lithography

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