Presentation
13 March 2019 High power 808nm to 1060nm CW and QCW laser diode bars (Conference Presentation)
Guoli Liu, Sami Lehkonen, Zuntu Xu, Jingwei Li, Heiko Winhold, Sergei V. Govorkov, Heiko Kissel, Jens Biesenbach
Author Affiliations +
Proceedings Volume 10900, High-Power Diode Laser Technology XVII; 109000B (2019) https://doi.org/10.1117/12.2523782
Event: SPIE LASE, 2019, San Francisco, California, United States
Abstract
We present recent progress of high power 808nm to 1060 nm laser bar operating at both CW and QCW operation. At CW operation, we demonstrate 50FF4.0 mm 940nm to 1060 nm bar can achieve up to 300W output power at 300A with high TE purity on MCCP package. At QCW operation, the 808nm 80FF1.5 mm bar can achieve 600W output power at both 25oC and 75oC on standard CCP; and the 75FF3.0 mm 940nm and 970nm bar can achieve 1KW at 1KA. We will also present results of our 808nm ~ 970nm QCW bar at ns region up to multi KA drive.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guoli Liu, Sami Lehkonen, Zuntu Xu, Jingwei Li, Heiko Winhold, Sergei V. Govorkov, Heiko Kissel, and Jens Biesenbach "High power 808nm to 1060nm CW and QCW laser diode bars (Conference Presentation)", Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000B (13 March 2019); https://doi.org/10.1117/12.2523782
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