Paper
18 November 1989 On The Measurement Of Mm-Wave Propagation Characteristics Of GaAs Microstrip Lines
Robert R. Romanofsky, Kim Adaway, Kul B. Bhasin
Author Affiliations +
Proceedings Volume 1039, 13th Intl Conf on Infrared and Millimeter Waves; (1989) https://doi.org/10.1117/12.978456
Event: 13th International Conference on Infrared and Millimeter Waves, 1987, Honolulu, HI, United States
Abstract
A thorough analytical procedure is developed for evaluating the frequency dependent loss characteristics and effective permittivity of millimeter-wave microstrip lines. The technique is based on the measured reflection coefficient of microstrip resonator pairs. Experimental data including Q factor, effective relative permittivity, and fringing for 50 Ω lines on GaAs was obtained. Effects of an imperfect open circuit, coupling losses, and loading of the resonant frequency are considered. A cosine tapered ridge guide fixture was used to characterize the resonators.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert R. Romanofsky, Kim Adaway, and Kul B. Bhasin "On The Measurement Of Mm-Wave Propagation Characteristics Of GaAs Microstrip Lines", Proc. SPIE 1039, 13th Intl Conf on Infrared and Millimeter Waves, (18 November 1989); https://doi.org/10.1117/12.978456
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Resonators

Gallium arsenide

Semiconducting wafers

Network security

Microwave radiation

Capacitance

Dispersion

Back to Top