Electronic structure of nitrogen-doped GaAs and GaP

A. Mascarenhas; Yong Zhang

doi:10.1117/12.482617

28 August 2002 Electronic structure of nitrogen-doped GaAs and GaP

A. Mascarenhas, Yong Zhang

Proceedings Volume 10303, Gallium-Nitride-based Technologies: A Critical Review; 103030D (2002) https://doi.org/10.1117/12.482617
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The dilute nitrogen alloys GaAs_1-xN_x and GaP_1-xN_x have recently become technologically important for applications in high efficiency solar cells and vertical cavity surface emitting diode lasers used for fiber optic communications. There exist many inconsistencies between the results of various experimental techniques and theoretical models used to probe the giant band gap lowering observed in. these systems. It appears that these inconsistencies originate because GaAs_1-xN_x and GaP_1-xN_x should perhaps not be viewed as an abnormal alloys but rather as a heavy isoelectronically doped semiconductors. The similarity and dissimilarity between the two systems will be discussed with respect to: (1) The perturbation of the host band structure caused by nitrogen doping. (2) The evolution of nitrogen bound states with increasing nitrogen doping (3) The dominant contributors to the band edge absorption, and (4) Whether there exists a universal model that explains the anomalous behaviour of GaAs_1-xN_x and GaP_1-XN_X. Key issues such as the relevance of various theoretical band structure calculations to the experimentally measured parameters, and as to how exactly does one define the band gap for these materials will also be examined. Finally, possible solutions for regularizing the abnormal behavior of dilute N alloys will be discussed.

Citation Download Citation

A. Mascarenhas and Yong Zhang "Electronic structure of nitrogen-doped GaAs and GaP", Proc. SPIE 10303, Gallium-Nitride-based Technologies: A Critical Review, 103030D (28 August 2002); https://doi.org/10.1117/12.482617

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KEYWORDS

Gallium arsenide

Nitrogen

Doping

Systems modeling

Absorption

Fiber optic communications

Semiconductor lasers

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