Grazing-incidence-slab semiconductor laser (GRISSL)

Anish K. Goyal; Robin K. Huang; Leo Missaggia

doi:10.1117/12.768716

5 February 2008 Grazing-incidence-slab semiconductor laser (GRISSL)

Anish K. Goyal, Robin K. Huang, Leo Missaggia

Proceedings Volume 6909, Novel In-Plane Semiconductor Lasers VII; 69090T (2008) https://doi.org/10.1117/12.768716
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We report on a novel geometry for electrically driven semiconductor lasers called the GRISSL. The laser cavity is formed between two mirrors that are external to the semiconductor chip and the laser beam intercepts the quantum well (QW) gain region at a grazing angle-of-incidence. In this first demonstration of the GRISSL, the laser structure was grown on an n-type GaAs substrate and the gain region comprises three InGaAs QWs. The external cavity consists of a pair of lenses, a flat high-reflectivity mirror, and a flat R = 70% output coupler. Lasers emit a power of 30 mW CW in a single-mode, 35-μm-diameter beam at λ ~ 0.98 μm. Under pulsed conditions (1 μsec, 1 kHz), a peak output power of 0.37 W was measured. The beam is single-mode near threshold but becomes multi-mode at the maximum drive currents. The slope efficiency of these devices is about 10 times lower than the design value of 1 W/A. This discrepancy can be accounted for by higher than anticipated losses in the substrate and a poor overlap of the laser beam with the pumped region. Methods for overcoming both of these factors to regain a high wall-plug efficiency are discussed.

Citation Download Citation

Anish K. Goyal, Robin K. Huang, and Leo Missaggia "Grazing-incidence-slab semiconductor laser (GRISSL)", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090T (5 February 2008); https://doi.org/10.1117/12.768716

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