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1 November 2016 Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters
Fang Liu, Jiaobo Gao, Chongmin Yang, Jianfu Zhang, Yongqiang Liu, Qinglong Liu, Songlin Wang, Gaoyuan Mi, Huina Wang
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Proceedings Volume 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control; 101573P (2016) https://doi.org/10.1117/12.2248328
Event: International Symposium on Optoelectronic Technology and Application 2016, 2016, Beijing, China
Abstract
ZnS and Ge are very normal optical thin film materials in Infrared wave. Studying the influence of different substrate baking temperature to refractive index and actual deposition rates is very important to promote optical thin film quality. In the same vacuum level, monitoring thickness and evaporation rate, we use hot evaporation to deposit ZnS thin film materials and use ion-assisted electron beam to deposit Ge thin film materials with different baking temperature. We measure the spectral transmittance with the spectrophotometer and calculate the actual deposition rates and the refractive index in different temperature. With the higher and higher temperature in a particular range, ZnS and Ge refractive index become higher and actual deposition rates become smaller. The refractive index of Ge film material change with baking temperature is more sensitive than ZnS. However, ZnS film actual deposition rates change with baking temperature is more sensitive than Ge.
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Fang Liu, Jiaobo Gao, Chongmin Yang, Jianfu Zhang, Yongqiang Liu, Qinglong Liu, Songlin Wang, Gaoyuan Mi, and Huina Wang "Effect of substrate baking temperature on zinc sulfide and germanium thin films optical parameters", Proc. SPIE 10157, Infrared Technology and Applications, and Robot Sensing and Advanced Control, 101573P (1 November 2016); https://doi.org/10.1117/12.2248328
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KEYWORDS
Germanium
Thin films
Zinc
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