Paper
3 January 2006 Combinatorial deposition by r.f. magnetron sputtering using subdivided powder targets as new development method for thin-film phosphors
Author Affiliations +
Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60371U (2006) https://doi.org/10.1117/12.638724
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia
Abstract
A new technique incorporating combinatorial deposition to develop new multicomponent oxide and oxynitride thin-film phosphors by r.f. magnetron sputtering is demonstrated using subdivided powder targets. By sputtering with a powder target that is subdivided into two or more parts, phosphor thin films with a chemical composition that varied across the substrate surface could be successfully prepared. In Zn2Si1-XGeXO4:Mn thin films, for example, the chemical composition (Ge content (X)) could be optimized to obtain higher electroluminescent and photoluminescent emission intensities by using only one deposition with the new technique. As a result, a high luminances of 11800 and 1536 cd/m2 for green emission was obtained in Zn2Si0.6Ge0.4O4:Mn TFEL device driven at 1 kHz and 60 Hz, respectively. In ((AlN)1-X-(CaO)X):Eu thin films, for example, the chemical composition (CaO content (X)) could be optimized to obtain higher electroluminescent and photoluminescent emission intensities by using only one deposition with the new technique. As a result, a luminance of 170 cd/m2 for red emission was obtained in an ((AlN)0.1-(CaO)0.9):Eu TFEL device driven at 1 kHz.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiro Miyata, Yuu Mochizuki, and Tadatsugu Minami "Combinatorial deposition by r.f. magnetron sputtering using subdivided powder targets as new development method for thin-film phosphors", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60371U (3 January 2006); https://doi.org/10.1117/12.638724
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KEYWORDS
Thin films

Manganese

Europium

Germanium

Aluminum

Silicon

Thin film devices

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