Analysis of SiNx TIR mirror for polygonal ring resonator sensor structure

Jun-Hee Park; Myung-Gi Ji; Su-Jin Jeon; Ji-Hoon Kim; Young-Wan Choi

doi:10.1117/12.2250486

22 February 2017 Analysis of SiN_x TIR mirror for polygonal ring resonator sensor structure

Jun-Hee Park, Myung-Gi Ji, Su-Jin Jeon, Ji-Hoon Kim, Young-Wan Choi

Proceedings Volume 10098, Physics and Simulation of Optoelectronic Devices XXV; 100981M (2017) https://doi.org/10.1117/12.2250486
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this paper, total internal reflection (TIR) mirror is carefully simulated for silicon nitride polygonal ring resonator sensor structure. Polygonal resonator has recently attracted much attention for applications in bio and chemical sensors because it does not have a bending loss, and it has an advantage of using MMI coupler. In polygonal resonator sensor design, high Q-factor and low TIR mirror loss are extremely significant factors. Therefore, critical angle and Goos-Hanchen shift should be considered in the design of TIR mirror. When cladding material is SiO₂, the critical angle of SiN_x waveguide is about 44.99 degrees and the Goos-Hanchen shift is about 400 nm at 1.55 μm wavelength. For the rib type waveguide, we designed it to have 3 μm width, 1 μm height, and 0.5 μm etching depth for decreasing TIR mirror loss. As simulation results of FDTD, reflectivitities of polygonal TIR mirrors are 79% for pentagon, 95% for hexagon and 98% for octagon, respectively. According to the simulations, Q-factors for hexagonal and octagonal resonators can be obtained as high as 1.55 x 10⁴ and 1.72 x 10⁴, respectively.

Citation Download Citation

Jun-Hee Park, Myung-Gi Ji, Su-Jin Jeon, Ji-Hoon Kim, and Young-Wan Choi "Analysis of SiN_x TIR mirror for polygonal ring resonator sensor structure", Proc. SPIE 10098, Physics and Simulation of Optoelectronic Devices XXV, 100981M (22 February 2017); https://doi.org/10.1117/12.2250486

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