High Speed Semiconductor Lasers For Interconnects

Badri N. Gomatam; Alfred P. De Fonzo

doi:10.1117/12.947444

8 September 1988 High Speed Semiconductor Lasers For Interconnects

Badri N. Gomatam, Alfred P. De Fonzo

Proceedings Volume 0947, Interconnection of High Speed and High Frequency Devices and Systems; (1988) https://doi.org/10.1117/12.947444
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We review current techniques in modeling the semiconductor laser through the use of equivalent circuits that predict semiconductor laser performance under high frequency modulation and high speed switching conditions as well as the influence of material parameters and characteristics. Factors governing the intrinsic response of the laser are discussed. We then discuss the influence of packaging and chip parasitics on the modulation response.

Citation Download Citation

Badri N. Gomatam and Alfred P. De Fonzo "High Speed Semiconductor Lasers For Interconnects", Proc. SPIE 0947, Interconnection of High Speed and High Frequency Devices and Systems, (8 September 1988); https://doi.org/10.1117/12.947444

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