High Frequency Characteristics Of 1.3 µm Lasers

D. Renner; W. H. Cheng; J. Pooladdej; A.. Appelbaum; K. L. Hess; S. W. Zehr

doi:10.1117/12.976385

22 June 1989 High Frequency Characteristics Of 1.3 µm Lasers

D. Renner, W. H. Cheng, J. Pooladdej, A.. Appelbaum, K. L. Hess, S. W. Zehr

Proceedings Volume 1043, Laser Diode Technology and Applications; (1989) https://doi.org/10.1117/12.976385
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

A review of high frequency InGaAsP/InP laser structures is presented. The performance of these devices is analyzed based on a rate equations model. The effects of packaging and device parasitics on high speed modulation are also considered through a circuit configuration. The model is used to compare the relative advantages of the main high frequency laser structures in order to maximize the obtainable modulation bandwidth. The characteristics of buried crescent lasers with semi-insulating current-blocking layers are highlighted. A 3-dB direct modulation bandwidth of 11 GHz together with 42-mW output power has been achieved with this device.

Citation Download Citation

D. Renner, W. H. Cheng, J. Pooladdej, A.. Appelbaum, K. L. Hess, and S. W. Zehr "High Frequency Characteristics Of 1.3 µm Lasers", Proc. SPIE 1043, Laser Diode Technology and Applications, (22 June 1989); https://doi.org/10.1117/12.976385

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available