Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.

Robert E. Williams; Stan Weaver; Ernest W. Balch; John C. Sardella

doi:10.1117/12.963637

9 July 1986 Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.

Robert E. Williams, Stan Weaver, Ernest W. Balch, John C. Sardella

Author Affiliations +

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963637
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The effect of several key process variables on the litho-graphic performance of Altilith CEM-420 was investigated. Linewidth control in the resist image was measured by etching the substrate and electrically probing the resulting polysilicon lines with a Prometrix LithoMap LM20 system. Scanning electron microscopy was also used for some of the linewidth measurements over topography. The CEM-420 process was most effective when used in conjunction with an optimized photoresist process. We investigated lowering the resist softbake temperature and/or increasing the developer concentration. In each case the CEM-420 process performed better with the original processing conditions. Increasing the thickness of the CEM-420 layer improved linewidth control whether expressed as the change in critical dimension with change in exposure dose or as the ability to image different feature sizes at a given exposure dose. CEM-420 dramatically improved linewidth control over topography. Exposure times increased by a factor of between two and three with CEM-420. The effect of increasing exposure time on wafer throughput was miffimal. CEM-420 provided improved resolution with sodium, potassium, and metal-ion-free developers. Proximity effects were reduced with CEM-420. Modeling studies agreed with the exper-imental results showing increased exposure latitude for small feature sizes, improved resist profiles, and a reduction in the effect of standing waves.

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Robert E. Williams, Stan Weaver, Ernest W. Balch, and John C. Sardella "Contrast Enhancement Materials. Effects Of Process Variables On Critical Dimension Control With Altilith Cem-420.", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963637

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