Impact Of Resist Contrast On Process Latitude: A Modeling Study

Marie C. Flanigan; Ronald W. Wake

doi:10.1117/12.947813

18 April 1985 Impact Of Resist Contrast On Process Latitude: A Modeling Study

Marie C. Flanigan, Ronald W. Wake

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947813
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

Silicon wafers coated with 1.0 micrometer of ACCULITH® P-6010 positive photoresist were exposed at 436 nm and processed in three different developers known to produce different levels of contrast. From experimental thickness vs. time curves, development parameters required as input to SAMPLE were determined. These parameters are preliminary in that they have yet to be optimized over the entire exposure range. Within a limited energy range however, information on relative trends in exposure and development latitude as a function of contrast has been determined. The effect of adding an antireflective coating between the silicon and the resist was briefly examined.

Citation Download Citation

Marie C. Flanigan and Ronald W. Wake "Impact Of Resist Contrast On Process Latitude: A Modeling Study", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947813

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