Paper
7 May 1980 Extrinsic Charge-Extraction Device (XCED)--An Extrinsic-Silicon Focal-Plane Array Architecture
David N. Pocock, Kuang Y. Chiu, Rolland A. Missman, David E. Nuttall
Author Affiliations +
Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958474
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
The XCED (extrinsic charge-extraction device) is a unique focal-plane array structure designed for staring infrared-imaging applications. Extrinsic-silicon detectors, MOS integrating storage capacitors, and unique accumulation mode multiplexing devices are combined in a two-dimensional array within a single monolithic chip. Zinc-doped silicon has been studied and utilized to fabricate detectors sensitive in the 2 to 4 Ilm spectral band with BLIP operating temperatures above 110°K. The potentially severe problems for staring arrays of element-to-element nonuniformities and detector storage saturation have been solved. Preliminary results and thermal imagery are shown for a 16 x 16 element array.
© (1980) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David N. Pocock, Kuang Y. Chiu, Rolland A. Missman, and David E. Nuttall "Extrinsic Charge-Extraction Device (XCED)--An Extrinsic-Silicon Focal-Plane Array Architecture", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958474
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KEYWORDS
Sensors

Staring arrays

Capacitors

Silicon

Zinc

Transistors

Infrared sensors

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