"Progress In Schottky-Barrier IR Imagers"

Walter F. Kosonocky

doi:10.1117/12.939867

20 September 1987 "Progress In Schottky-Barrier IR Imagers"

Walter F. Kosonocky

Proceedings Volume 0750, Infrared Systems and Components; (1987) https://doi.org/10.1117/12.939867
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

Schottky-barrier focal plane arrays are the only infrared imagers that are fabricated by the well established silicon VLSI process. Therefore, at the present time they repre-sent the most mature technology for large-area high-density focal plane arrays for many SWIR (1 to 3 μm) and MWIR (3 to 5 μm) applications.^1-27- PtSi Schottkybarrier detectors (SBDs) were developed for operation in the MWIR band at a temperature of 77 to 80K. These SBDs can be designed for operation at 77K with a dark current density in the range of 1.0 to 20 nA/cm². Pd₂Si SBDs were developed for operation with passive cooling at 120K in the SWIR band. Although the PtSi SBDs have rather low quantum efficiency (0.5 to 1.0% at 4.0 μm), however, because of very low readout noise, the IR-CCD imagers with PtSi SBDs are capable of 300K thermal imaging with a noise equivalent (NEAT) of less than 0.1K. The noise floor of the SBD arrays is limited by the SBD dark current shot noise.

Citation Download Citation

Walter F. Kosonocky ""Progress In Schottky-Barrier IR Imagers"", Proc. SPIE 0750, Infrared Systems and Components, (20 September 1987); https://doi.org/10.1117/12.939867

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