Augmented reality (AR) technologies that enable the overlay of digital information on the real world are widely anticipated to be the next wave of computing platforms. For a truly immersive AR experience, the AR glasses should be lightweight, comfortable, stylish, socially acceptable, and efficient that can be worn all day. Traditional optical devices are very bulky and are not suitable for head mounted displays (HMDs) for AR glasses. Hence, there is an increasing interest in developing nano-optics based devices that are significantly smaller and lighter than the conventional devices. Materials innovation is one of the key pillars that could enable the fabrication of such lightweight devices.
In this talk, the impact of new materials like highly transparent, high refractive index (HRI) substrates, litho and patterning materials for device fabrication and permanent optical materials to develop all-day wearable AR glasses will be discussed.
As the critical dimension (CD) in semiconductor devices continues to shrink, the multilayer patterning process to transfer fine line patterns into an underlying substrate is becoming increasingly important. The trilayer processes consist of a photoresist film, a silicon-containing layer and a carbon rich underlayer. The distinctive difference in etch selectivity toward fluorine and oxygen based reactive ion etching (RIE) chemistry is critical to provide highly selective pattern transfer to the substrate. In response to the need for high etch resistant underlayers, we have developed carbon rich spin-on carbon (SOC) materials with good solubility in preferred casting solvents, high thermal stability and high dry etch resistance. To better understand structure-property relationships of high etch resistant SOC films, cured SOC films were analyzed by Fourier-transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-Vis), X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The design considerations for high etch resistance SOC underlayers, such as Ohnishi parameter, crosslinking and film density, will be discussed in this paper.
KEYWORDS: System on a chip, Etching, Thin film coatings, Polymers, Resistance, Carbon, Chemical vapor deposition, Coating, Reactive ion etching, Silicon
In the multilayer patterning process, underlayer material is often used to enable device size shrinkage for advanced integrated circuit manufacturing. This underlayer material, spin on carbon (SOC), with high etch resistance plays an important role in both gap fill and process of transferring high aspect ratio patterns. Good global planarization (PL) performance over various pattern topographies not only impacts on the following lithography process window but also boosts the overall device integration yield (Figure 1). As critical dimension (CD) size decreases in the advanced nodes such as 10 nm and beyond with multiple patterning steps, long range planarizing SOC material is needed to control the CD uniformity. During the single coat and single bake process, thermal flow ability of these carbon rich materials is one of the key property to achieve long range planarization performance. In addition, our strategy for designing long distance thermal flow polymers will be applied to both low/high thermal stability SOC materials. Herein, we report the development of a novel planarized SOC materials with good Fab drain line compatibility. As for material global planarization performance, the observation of flow ability can be monitored through the various cure conditions. Other key performance such as gap fill, etch rate toward various gases, solvent strip resistance and cured film thermal stability will be also highlighted in this paper.
The use of multilayer processes in advanced ArF patterning schemes continues to increase as device critical dimensions shrink. In a multilayer stack, underlayer materials play a critical role in terms of gap fill, planarization and etch resistance to enable high resolution and high aspect ratio patterning. The emerging quadlayer imaging process requires a unique spin on carbon (SOC) layer with high thermal stability to withstand subsequent deposition of an inorganic hard mask layer, commonly deposited via chemical vapor deposition (CVD). The thermal stability requirement associated with CVD compatibility largely limits the options of organic materials, which mostly decompose in the 300-450°C range. Thermal shrinkage and coefficient of thermal expansion (CTE) differences between layers are other key considerations in designing a high temperature stable, CVD compatible SOC material. Furthermore, the SOC polymer resin must be compatible with solvents and spin on products commonly used in the FAB. This paper highlights the development of a novel CVD compatible HT-SOC platform with excellent thermal stability (>500°C) and good FAB drain line compatibility. In addition, this polyaromatic SOC platform shows various improvements compared to traditional Novolacbased SOC, including reduced shrinkage, good gap fill, improved planarization, and low defectivity. Robust formulation design, high quality raw materials, and advanced metal removal technique synergistically enabled manufacturing of multigallon HT-SOC product with high quality. Application specific versions are available for more demanding planarization requirement and applications that require good adhesion to metal substrate. In addition, a newly developed method for quantitative measurement of long-range planarization was used to validate new material designs aimed at improving planarization.
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