We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.
A silicon nitride narrow-band multimode waveguide Bragg grating (NBMWBG) optical filter with high SLSR and low insertion loss based on the inverse design of MWBG is demonstrated. The complementary lateral-misalignment modulation apodization is used to create physically grating structure of NBMWBG. The insertion loss, 3-dB bandwidth and SLSR of proposed NBMWBG are measured to be 0.9 dB, 0.8 nm and 32 dB, respectively. Keywords: Silicon nitride, Bragg grating, Narrow-band,
Base on Silicon-On-Insulator (SOI), we demonstrate and compare three O-band 8-channel (de-)multiplexers based on box-shaped AWG, freeform-shaped AWG and saddle-shaped AWG for the 400 GBASE-LR8 norms. The comparison results indicate that the box-shaped AWG with large channel crosstalk of 23.3 dB, well-matched channel spacing and the FSR is more advisable choice for the 50 Gb/s PAM4 signal adopted by the 400 GBASE-LR8 standards with bandwidth of 0.14 nm.
We demonstrate a single chip silicon-based optical single sideband (OSSB) modulator which is composed of a branch line coupler (BLC) and a silicon dual-parallel Mach-Zehnder modulator (DP-MZM). Benefit from the powerful tool of optical domain compensation we propose, the constrains such as power imbalance and phase offset of BLC are eliminated. As a result, we realize a fully functional OSSB chip to implement full carrier OSSB (FC-OSSB) and suppressed carrier OSSB (SC-OSSB) modulations. The maximum sideband suppression ratio (SSR) of 35 dB is derived at 21 GHz.
We demonstrate the 4-stage and 8-stage silicon traveling-wave photodetectors (TWPDs) with inductive gain peaking technique. Compared with un-peaked TWPDs, the bandwidths of 4-stage and 8-stage TWPDs integrated with inductors are improved from 32 GHz to 44 GHz, and from 16GHz to 24 GHz, respectively. It is experimentally validated that gain peaking is an effective technology to improve bandwidths for multiple-stage TWPDs.
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