This paper studies the methodologies to regulate the output brightness of auto-gated image intensifier by users across diverse illumination settings, in according to their specific application scenarios. Firstly, we investigated the influencing factors affecting the output brightness of auto-gated image intensifier under various illumination conditions, Subsequently, we introduced a novel approach: adjusting the MCP voltage when the illumination falls below its saturation point, otherwise adjusting the value of anode current set. Notably, these two methods can operate independently and collectively contribute to the modulation of output brightness. Finally, our findings indicate that image intensifiers using this adjustment method can achieve a range of brightness changes from 0 d/m2 to 12cd/m2, spanning illumination levels from 5×10-5 lx to 5×102 lx, and this capability can effectively fulfils the diverse requirements of various night vision devices.
KEYWORDS: Etching, Surface roughness, Passivation, Silicon, Back illuminated sensors, Light sources and illumination, Signal to noise ratio, Ion beams, Aluminum, CMOS sensors
Electron bombardment active pixel sensor (EBAPS) is a new type of night vision imaging digital device. It has outstanding characteristics such as all-weather, small size, light weight, and large dynamic range, which has attracted widespread attention in the fields of biological detection, high-energy physics, and low-light night vision imaging. In this paper, an EBAPS device for low-light imaging was prepared, the APS image sensor chip was etched and backside grinded by ion beam etching (IBE) equipment. Taguchi's experimental design was used to investigate the effects of IBE etching energy, beam current and angle on the surface roughness and etching depth of the passivation film layer on the surface of APS image sensor. The electron bombardment imaging under 5×10-5lx illumination is realized by applying the most effective process parameters to EBAPS devices.
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