Highly uniform ball-shaped indium bump arrays with small pixel pitches down to 10 μm have been fabricated. Multilayer stacked metal contact electrodes covered by a thin SiNx dielectric layer serve as the under bump metallization. Indium bumps were thermally evaporated inside the SiNx openings on top of the electrodes. Wet lift-off of the indium bumps was achieved by using a negative photoresist with precisely controlled undercuts. By comparison to a recipe without the SiNx, the non-uniform reflow effect of the indium materials was effectively eliminated after the thermal treatment. A mean indium ball diameter of 6.05 μm with a small coefficient of variation of 2.6% was finally realized for 10 μm pitch arrays. These results demonstrate the fabrication method is promising to ensure a reliable flip-chip hybridization of ultra-fine pitch focal plane arrays to silicon readout circuits with high yield.
The short-wavelength infrared (SWIR) InGaAs focal plane array (FPA) detector consists of infrared detector chip, readout integrated circuit (ROIC), and flip-chip bonding interconnection by Indium bump. In order to satisfy space application requirements for failure rates or Mean Time to Failure (MTTF), which can only be demonstrated with the large number of detectors manufactured, the single pixel in InGaAs FPAs was chosen as the research object in this paper. The constant-stress accelerated life tests were carried out at 70°C,80°C,90°C and100°C. The failed pixels increased gradually during more than 14000 hours at each elevated temperatures. From the random failure data the activation energy was estimated to be 0.46eV, and the average lifetime of a single pixel in InGaAs FPAs was estimated to be longer than 1E+7h at the practical operating temperature (5°C).
The spectral irradiance of moonlight and air glow is mainly in the wavelength region from visible to short-wave infrared (SWIR) band. The imaging over the wavelength range of visible to SWIR is of great significance for applications such as civil safety, night vision, and agricultural sorting. In this paper, 640×512 visible-SWIR InGaAs focal plane arrays (FPAs) were studied for night vision and SWIR imaging. A special epitaxial wafer structure with etch-stop layer was designed and developed. Planar-type 640×512 InGaAs detector arrays were fabricated. The photosensitive arrays were bonded with readout circuit through Indium bumps by flip-chip process. Then, the InP substrate was removed by mechanical thinning and chemical wet etching. The visible irradiance can reach InGaAs absorption layer and then to be detected. As a result, the detection spectrum of the InGaAs FPAs has been extended toward visible spectrum from 0.5μm to 1.7μm. The quantum efficiency is approximately 15% at 0.5μm, 30% at 0.7μm, 50% at 0.8μm, 90% at 1.55μm. The average peak detectivity is higher than 2×1012 cm·Hz1/2/W at room temperature with an integrated time of 10 ms. The Visible-SWIR InGaAs FPAs were applied to an imaging system for SWIR and visible light imaging.
Space infrared detector is the core component of photoelectric conversion in the infrared system, the indicator of which, such as sensibility and reliability, limits the optimum performance of the detection system. In the reliability research of infrared detector, the operating life of the device is a very important index and also a significant subject in the engineering application. In the accelerated life test of space infrared detector, it was difficult to periodically measure blackbody response signal of infrared detector, due to equipment limitations for a long time. Accordingly, it was also hard to get abundant failure data of devices for statistical analysis. For this problem, we designed a novel multi-station testing system for accelerated life test of space infrared device, in which response signal as well as temperature can be measured in-situ and recorded for further analysis. Based on theoretical calculation and analysis of actual measured data, we studied and designed the mechanical structure of the equipment and the key component of the testing system, such as the displacement platform, illustrated the control algorithm and put up a system design proposal which meet the testing requirements well. This work technically supports the accelerated life test of space infrared device.
In the life test of space infrared detector, it was unable to periodically measure blackbody response signal of infrared detectors conveniently, due to equipment limitations for a long time. Accordingly, it was also unable to get abundant failure data of devices for statistical analysis. For this problem, we have designed a new multi-station structure, in which automatic test of signal can be carried out on life test site. The displacement platform is the key component to achieve automatic test. By theoretical analysis of parameters which affect response signal and actual test data analysis, we studied and designed the displacement platform, and put up indexes of displacement platform which meet the system requirements well. Indexes of the rotating stage are: repeat positioning accuracy <9.5×10-4°
, radial run-out <10 um, face run-out <20 um. Indexes of the translation stage are: repeat positioning accuracy <10 um, straightness <10 um, flatness< 20 um. And the blackbody pitch angle should be controlled within less than 1°. This design well prepared for the development of automatic test system of infrared detector photoelectric properties.
In this paper, an automatic measuring system based on LABVIEW and PLC is introduced; it uses the mutual controls of Single-Chip computer (MCU) and LABVIEW to accomplish the electrical parameter measurements of infrared detectors. This system can realize the multiple parameter measurements of no less than 160 IR detectors, it can realize the collection and storage of results by the LABVIEW; and it can avoid the damage of the IR detector during the measurement. After thousands times of test, the results show that the system runs stably and it can meet the accurate parameter measurement of detector.
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