Interband cascade (IC) lasers take advantage of the broken band-gap alignment in type-II quantum wells to
reuse injected electrons in cascade stages for photon generation with high-quantum efficiency, while retaining
interband transitions for photon emission without involving fast phonon scattering. Over the past several years,
significant progress has been made in developing efficient IC lasers, particularly in the 3-4 μm region where
continuous wave (cw) operation was achieved at above room temperature with low power consumption. In this
paper, we report our recent efforts in the development of IC lasers at longer wavelengths (4.3-7.5 μm) based on InAs
substrates and plasmon-waveguide structures. Cw operation of plasmon-waveguide IC lasers has been achieved at
temperatures up to 184 K near 6 μm. Also, improved thermal dissipation has been demonstrated with the use of the
plasmon waveguide structure.
Interband cascade (IC) infrared (IR) photodetectors (ICIPs) are a new type of detector that combines features of
conventional interband photodiodes with the discrete nature of quantum-well IR photodetectors (QWIPs) and IC
lasers. The operation of ICIPs takes advantage of fast intersubband relaxation and interband tunneling for carrier
transport, and relatively slow interband transitions (long lifetime) for photon generation. As such, ICIPs can be
tailored to optimize device performance for specific application requirements. We report our initial efforts in the
development of ICIPs. We have observed the photocurrent from an InAs-based IC laser with a cutoff wavelength
near 8 μm at 80 K, and significant photocurrent from GaSb-based ICIPs with cutoff wavelengths near 5 μm at 80 K
and 7 μm at above room temperature.
The semiconductor solid phase epitaxial model of continuous laser-annealing is used to simulate the laser-annealing process of different doping concentration of InP at the continuous Nd:YAG laser. Specially, quasi-static model is used to simulate the radial heat dissipation from radiant region to radiationless region. At the same time, thermal conductivity and optical absorption coefficient varied with temperature is also considered. The method of hidden-form different is used in solving 1D, non-homogeneous, nonlinear partial differential equation of heat conduction. At the room temperature T0 equals 300 K and the power intensity of laser I0 equals 800 W/cm2, the result is that the temperature of surface reaches about 1290 K after 3.8 sec.
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