Future mobile and terrestrial communication systems B5G/6G are strongly expected to heterogeneously realize typically diversified performances, i.e. high-data-rate, high-mobility, low-latency, high-capacity, massive-connectivity and low-energy in order to satisfy the highly diversified application requirements. To achieve those goals the operation band of B5G/6G should be primarily in the millimeter-wave (mmW) range. Generation and distribution of mmW with traditional methods is limited by electronic bottleneck and associated complexity. Consequently broad bandwidth, simple, efficient, and cost-effective photonic mmW-over-fiber (mmWoF) transmission systems are solutions for B5G/6G. The spectral purity of mmW carriers is necessary. Numerous approaches have been proposed to generate pure mmW signals. Compared with other technologies, quantum dash or dot (QD) coherent comb lasers (QD CCLs) have great advantages for mmW generation because QD-CCLs with low power consumption and chip-scale integration capacity with silicon can provide multiple highly correlated and low noise optical channels. In this paper we will present our developed InAs/InP QD-CCLs around 1550 nm with the channel spacing from 10 GHz to 1000 GHz and the output power up to 50 mW. By using a C-band QD CCL and based on the single- and dual-optical carrier modulation schemes, an up to 16-Gb/s mmWoF optical heterodyne wireless signal at 28 GHz through a 25-km single mode fiber before the mmW carrier is optically synthesized remotely for detection over a 2-m free space. The data capacity and performance of the proposed mmWoF link can be significantly increased by utilizing a duplex mmWoF link with MIMO and WDM technique, which provides a cost-efficient and promising solution for Terabit/s capacity mmWoF fronthaul systems of B5G/6G networks.
Optical frequency combs have become essential components in a wide variety of technologies, with semiconductor laser diodes becoming increasingly relevant due to their seamless integration with photonic circuitry. We study the high temperature operation of a single-mode, passively mode-locked ridge waveguide laser based on InAs/InP quantum dashes designed for C-band operation. We present experimental evidence of stable optical frequency comb generation at temperatures up to 85°C, with peak widths of the repetition rate below 10 MHz. When deployed in high temperature environments, these devices can offer power savings of up to 80%.
This work has proposed and compared several millimeter wave (mmWave) radio-over-fiber (RoF) frequency multiplexing techniques based on InAs/InP quantum dash (QD) mode locked laser (MLL). QD-MLL is capable of generating tens of highly coherent optical carriers simultaneously with same frequency difference. After heterodyne detection, the RF phase noise of QD-MLL can be as low as 15kHz. In this paper, four different RoF based mmWave frequency multiplexing architecture is proposed and compared in experimentation. The EVM of two 2GBaud/s 16-QAM mmWave signal can be as low as 7.1% after demultiplexing in the experimentation.
A directly modulated quantum dash mode-locked laser is proposed for a 50-GHz millimeter-wave over fiber architecture. This advancement offers enhanced fiber-wireless communication capabilities, facilitating coverage of 15-km SMF and 2-m wireless QPSK transmissions. By utilizing the directly modulated laser (DML), we have successfully achieved an optical heterodyne mmW frequency of 50 GHz with exceptional stability. Notably, the measured RF beat-note 3-dB linewidth of the QDash DML is significantly reduced to 2.4 kHz, without the need for any optical feedback scheme. This DML-based hybrid architecture demonstrates the potential to seamlessly integrate with existing optical and wireless networks for next-generation indoor and short-reach mobile communications.
In this work, we have investigated self-injection locking effects on a full spectral system with selective single-channel injection and full-channel injection in a quantum dot mode-locked comb laser through an optical feedback loop. It has been noticed that self-injection locking can not only improve the performance of a single-channel laser system but also has a strong effect on the whole spectral behavior. In the case of single-channel self-injection, we investigated the effects under a locked regime above the injection-locking threshold PSIL. The locked lines were strongly enhanced with intensities high above the broad spectrum and also intensified even outside of the original spectral bandwidth. The typical feature is a big dip (or hole) appearing on the high-energy side of the lines if it is within the free-running spectral region. We have investigated this asymmetric phenomenon. It is considered that the locked modes are highly intensified at the expense of higher energy carriers excited by currents. The locking process transferred the energy from the lasing mode to the locked mode. For the full channel self-injection, the system was set under a controllable self-injection locking condition. A bandwidth enhancement phenomenon can be observed when injected power reaches the self-injection locking threshold PSIL, and the broadening gets stronger till to the locked regime. Finally, the original spectral bandwidth had been significantly broadened. This bandwidth broadening goes to both sides of the free-running spectrum and the broadening is remarkable.
In this work, we demonstrate the establishment of a self-injection locking threshold in a quantum dot (QD) comb laser with a Fabry-Perot cavity and an external feedback loop. This process involves controlling injection power and polarization to inject a controlled fraction of lasing power back into the QD laser source. The study is focused on the single line self-injection locking effects. The self-injection locking process was characterized by a self-injection locking threshold power (PSIL) and a locked power (Plocked). The self-injection locking process begins from the threshold power PSIL and followed by a magnified enhancement till it reaches the locked power (Plocked). Once in the locked region, the enhancement effect starts to stabilize and is only weakly influenced by injection power. The established threshold provides a distinctive condition for the measurements of the modified optical properties of the coupled cavity system. Additionally, the locked single lines tested at different currents indicated a very broad spectral coverage which are much larger than the original bandwidth of free running QD laser.
Using a model developed in Crosslight PICS3D, we have compared simulated gain and device performance for InAs/InP quantum dash ridge waveguide lasers with experimental data from fabricated devices. We investigated the change in device behaviour as the energy spectrum of the dashes is varied and inhomogeneous broadening is changed to represent a distribution of dash sizes and composition. We observed a distinct asymmetry of the dash layer occupation due to inefficient thermionic emission hindering hole transport across the quantum dash layer stack. We have quantified how this effect can be utilized to achieve higher threshold current temperature stability.
We investigate the evolution of current spreading, injection, and radiative differential efficiencies in InAs/InP quantum dash and InGaAsP quantum well lasers operating at 1550 nm under varying temperatures up to 80°C. Simulations in Crosslight PICS3D are compared to fabricated devices. The injection efficiency remains largely unaffected by temperature, with less efficient radiative recombination and current spreading accounting for the temperature sensitivity of device performance. A temperature-dependent 10% to 14% difference in the current spreading efficiency emerges as the primary cause of lower simulated efficiencies in these quantum dash lasers compared to the quantum wells.
The emission wavelength of self-assembled quantum dashes can be controlled by their height. Uncapped InAs/InGaAsP/InP quantum dashes are found to have two distinct heights, which we have measured with atomic force microscopy and denoted the plateau and the peak heights. These heights range from 0.50 nm to 2.35 nm. Under the same growth conditions, for increasing uncapped quantum dash heights we observe an increase in the photoluminescence peak emission wavelength from approximately 1535 to 1543 nm for the capped layers. A growth temperature of 520°C is determined to achieve uniform height distribution for 1550 nm emission using chemical beam epitaxy.
In order to achieve ultrahigh data capacity and to overcome the wireless spectrum crunch, 5G is going to adopt millimeter-wave (mmW) frequencies (30 GHz – 300 GHz). To generate high-quality mmW signals by lasers, it requires optical sources with ultra-narrow optical linewidth and low relative intensity noise (RIN). In recent years, we have developed InAs/InP quantum dot (QD) multi-wavelength lasers (MWLs) around 1550 nm with the frequency spacing from 10 GHz to 1000 GHz. Those QD MWLs have very low RIN, ultra-narrow optical linewidth, small timing jitters, compact size, low power consumption and the ability for hybrid integration with silicon substrates. In this paper we present a buried heterostructure (BH) C-band InAs/InP 25-GHz QD MWL with phase noise and RIN of less than 500 kHz and -130 dB/Hz for its individual channel, respectively. By using this QD MWL a photonic aided radio-over-fiber (RoF) quadrature amplitude modulated (QAM) signal wireless delivery at 25 GHz is successfully demonstrated through 25.22 km standard single-mode fiber (SSMF) with a data capacity of 16 Gbit/s (16QAM x 4GBaud). We have also presented a monolithic BH QD dual-wavelength (DW) DFB laser as an optical beat source for mmW signal generation. The BH QD DW-DFB laser with the optical linewidth of 16 KHz and the RIN of -158 dB/Hz is capable of generating spectrally pure mmW signals between 46 GHz and 48 GHz. By using it, we have demonstrated a real time 24-Gbit/s (64QAM x 4GBaud) data bandwidth wireless communication system operating at 47.2-GHz carrier over 25-km SSMF.
Photonic generations of millimeter-wave (mmW) frequencies (30 GHz – 300 GHz) have been attracted more and more interest for applications in 5G and beyond wireless networks. To generate high-quality mmW signals, it requires optical sources with ultra-narrow optical linewidth and low relative intensity noise (RIN). In recent years, we have demonstrated InAs/InP quantum dot / dash (QD) multi-wavelength lasers (QD MWLs) around 1550 nm with the frequency spacing from 10 GHz to 1000 GHz and output power of up to 50 mW. Those QD MWLs have low RIN, ultra-narrow optical linewidth, small timing jitters, compact size, low power consumption and the ability for hybrid integration with silicon substrates. As examples we present a monolithic dual-wavelength (DW) DFB laser based on synthesized aperiodic gratings on InAs/InP QD gain medium and its application as an optical beat source for mmW signal generation. The QD DW-DFB laser is capable of generating spectrally pure mmW signals between 46 GHz and 48 GHz with the 3-dB RF beating linewidth of less than 16 KHz and the RIN of -158 dB/Hz from 10 MHz to 20 GHz. By using this QD DW-DFB laser, we have experimentally demonstrated a multi-gigabit/s mmW radio-over-fiber (mmW-RoF) communication system operating at 47 GHz with 16QAM, 32QAM and 64QAM modulated signals over single mode fiber (SMF) in terms of clear eye and constellation diagrams. We have achieved an optical-heterodyne mmW-RoF system with broadband 4-meter wireless links through 25.22-km SMF featuring a high bitrate of 24-Gbit/s (64QAM × 4-GBaud) using a QD DW-DFB laser.
To support enhanced mobile broadband (eMBB) communication, 5G is going to use new radios (NRs) at frequencies above 24.25 GHz in the millimeter-wave (mm-wave) bands with abundant available bandwidths. The photonic generation, modulation and distribution of such ultra-high speed broadband RF signals in the optical domain is more promising compared to the bandwidth limiting electrical technology, however, it requires low noise coherent optical sources. In this paper, we present a highly coherent low noise InP-based p-n block buried heterostructure (BH) C-band InAs/InP quantum dash (QD) passively mode-locked laser (MLL) for photonic aided broadband wireless communication systems. The device features repetition rates of 25 GHz resulting in an optical coherent frequency comb (CFC) with a 6-dB optical bandwidth of around 9 nm providing over 46 channels. Each individual channel of the CFC exhibits an average phase noise and integrated relative intensity noise (RIN) of less than 500 kHz and -130 dB/Hz in the frequency range from 10 MHz to 20 GHz, respectively. Its timing jitter and RF beat-note linewidth between any two adjacent channels are as low as 5.53 fs and 3 kHz, respectively. By using this QD MLL, a photonic aided radio-over-fiber (RoF) broadband quadrature amplitude modulated (QAM) signal wireless delivery at around 25 GHz (K-band) is successfully demonstrated over 2-m free space wireless distance through 25.22 km standard single-mode fiber (SSMF) with a total link capacity of 16Gbit/s and error vector magnitude (EVM) below the standard requirements of 12.5%.
Next generation short and long reach communication networks would be required to provide data rates of multiterabit/ s. Such high line rates are not feasible using a single wavelength channel. However, the multi-terabit/s transmission capacity can be achieved by utilising highly parallel wavelength division multiplexing (WDM), with tens or hundreds of channels, in combination with spectrally efficient advanced modulation formats. Quantum dot (QD) coherent comb lasers (CCLs) are promising light sources for Terabit/s dense-WDM optical coherent and data center networks because such monolithic QD-CCLs solve the obvious cost, power consumption and packaging problems by replacing many separate lasers for each channel by only a single semiconductor laser. Other advantages include compact size, simple fabrication, and the ability for hybrid integration with silicon substrates. Recent years we have successfully developed InAs/InP QD CCLs with repetition rates from 10 GHz to 1000 GHz and a total output power up to 50 mW per facet at room temperature. In this paper we have presented the design, growth, fabrication, electronic control and packaging of the QD CCLs. The key technical specifications include L-I-V curves, optical and RF beating spectra, relative intensity noise and optical phase noise of each individual wavelength channel, as well as timing jitter are investigated. Data bandwidth transmission capacity of 5.376 Terabit/s and 10.8 Terabit/s in the PAM-4 and 16-QAM modulation formats are demonstrated by using a single QD CCL chip with a channel spacing of 34.2 GHz after 25 km and 100 km of single-mode fiber transmission lines, respectively.
We presented design, growth and fabrication of the InAs/InP quantum dot (QD) gain materials and the basic performance of the Fabry-Perot QD lasers as compared with the quantum-well (QW) lasers with the same doped materials and structures. By using those QDs we have developed several ultra-low intensity and phase noise coherent comb lasers (CCLs). We have used a 25-GHz QD C-band CCL to successfully demonstrate 10.3 Tbit/s (16QAM 56×23 GBd PDM) back-to-back coherent data transmission for coherent networks and 56×50 Gb/s PAM-4 back-to-back transmission with capacity of 2.8 Tbit/s at a symbol rate of 25 GBaud for data center applications.
We have developed an InAs/InP quantum dot (QD) mode-locked laser (MLL) with the channel spacing of 50 GHz. Its 3-dB bandwidth covering from 1546.89 nm to 1560.69 nm is 13.8 nm to provide 35 wavelength channels. We have investigated the relative intensity noises (RINs), phase noises, pulse duration and RF beating signals. By using this QD MLL we have successfully obtained the clear PAM-4 eye diagrams from any one of the filtered individual channels of the 50-GHz QD C-band MLL to demonstrate 2.24 Tbit/s (35x64 Gbit/s) PAM- 4 transmission bandwidth.
We have developed an external cavity self-injection feedback locking (SIFL) system to simultaneously reduce optical linewidth of each individual channel of an InAs/InP qantum dot (QD) 34.46-GHz coherent comb laser (CCL). Optical linewidths are reduced from a few MHz down to less than 300 kHz over 47 filtered individual channels, varying from 5.3% to 9.1% of the original linewidth, between 1531.60 nm to 1544.20 nm. By using this ultra-narrow linewidth QD CCL we have demonstrated 12.032 Tbit/s (16QAM 47x32 GBaud PDM) back to back coherent data bandwidth transmission capacity.
Current communication networks needs to keep up with the exponential growth of today’s internet traffic, and telecommunications industry is looking for radically new integrated photonics components for new generation optical networks. We at National Research Council (NRC) Canada have successfully developed nanostructure InAs/InP quantum dot (QD) coherence comb lasers (CCLs) around 1.55 m. Unlike uniform semiconductor layers in most telecommunication lasers, in these QD CCLs light is emitted and amplified by millions of semiconductor QDs less than 60 nm in diameter. Each QD acts like an isolated light source acting independently of its neighbours, and each QD emits light at its own unique wavelength. The end result is a QD CCL is more stable and has ultra-low timing jitter. But most importantly, a single QD CCL can simultaneously produce 50 or more separate laser beams at distinct wavelengths over the telecommunications C-band. Utilizing those unique properties we have put considerable effort well to design, grow and fabricate InAs/InP QD gain materials. After our integrated packaging and using electrical feedback-loop control systems, we have successfully demonstrated ultra-low intensity and phase noise, frequency-stabilized integrated QD CCLs with the repetition rates from 10 GHz to 100 GHz and the total output power up to 60 mW at room temperature. We have investigated their relative intensity noises, phase noises, RF beating signals and other performance of both filtered individual channel and the whole CCLs. Those highly phase-coherence comb lasers are the promising candidates for flexible bandwidth terabit coherent optical networks and signal processing applications.
The gain media of the quantum dot lasers consist of InAs QDs in an InGaAsP matrix on an InP substrate. The
quantum dot lasers have different free spacing ranges (FSRs) corresponding to Fabry-Pérot (F-P) cavity lengths. A
silicon ring resonator and a QD laser have been combined to form comb laser. The output characteristics of the
combined comb laser were investigated. The measured FSR was about 2.8nm and the extinction ratio was about
10(dB) when the FSR of the QD laser was about 0.4nm and the FSR of the ring resonator was about 0.47nm. The
experimental results show that the ring resonator had a strong control on the FSR and extinction ratio of the comb
laser.
Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWL) emitting at 1.53 μm
are investigated both above and below threshold. Above threshold, LEFs at three different wavelengths around the gain
peak by injection locking technique are obtained to be 1.63, 1.37 and 1.59, respectively. Then by Hakki-Paoli method LEF
is found to decrease with increased current and shows a value of less than 1 below threshold. These small LEF values have
confirmed our InAs/InP QDs are perfect gain materials for laser devices around 1.5 μm.
We have designed and fabricated a quantum dot (QD) gain medium which consists of InAs QDs in an InGaAsP matrix
on an InP substrate. By using these InAs/InP QD layers, we have generated femtosecond (fs) pulses with pulse duration
of 295 fs from a single-section monolithic Fabry-Perot (F-P) cavity at the repetition rate of 50 GHz around 1560 nm
wavelength range without any external pulse compression. The average output power is 40.1 mW at the injection current
of 200 mA. Optical signal-to-noise ratio (OSNR) of the proposed QD mode-locked laser (QD-MLL) is up to 50 dB. The
lasing threshold current and the external differential quantum efficiency are 23 mA and 30 %, respectively. And the
mode beating linewidth was measured to be less than 20 KHz. We have interpreted that several nonlinear optical effects
related to interaction of QD excitons with intracavity laser fields could create nonlinear dispersion to compensate
intracavity linear dispersion. So total dispersion is minimized and four-wave mixing (FWM) is dramatically enhanced
within QD F-P cavity. If spectral bandwidth is broad enough, tens or hundreds of longitudinal modes would lase and
their phases would be locked together through FWM process. Eventually a train of fs pulses with a repetition rate
corresponding to cavity round-trip time is generated.
We have demonstrated a novel approach to achieve a stable multi-wavelength laser system (MWLS) which is making
use of a quantum dot semiconductor optical amplifier (QD SOA) as a highly birefringence material and an optical
polarizer at the same time. Both the channel frequency spacing and the central lasing wavelength of the QD MWLS can
be accurately set by using the desired-designed QD SOA with the certain operation conditions and by setting the
polarization controller properly. The detailed working principles and the experimental results have been reported in this
paper. The proposed QD MWLS technology can be used for characterizing the intrinsic properties of the QD
semiconductor waveguide materials that could also be used for spectral narrowing of a laser system. We have
experimentally confirmed that the QD SOA is highly inhomogeneous gain material as compared with QW SOA.
We have demonstrated femtosecond pulses from a passive single-section monolithic InAs/InP quantum-dot (QD)
semiconductor laser with the active length of 456 µm and the ridge width of 2.5 µm in the C-band wavelength range
from 1528 nm to 1565 nm. The transform-limited Gaussian-pulses are generated at the 92-GHz repetition rate with the
312-fs pulse duration without any pulse compression scheme. The average output power is larger than 13.2 mW for the
injection current of 60 mA. And the lasing threshold current and external differential quantum efficiency are 17.2 mA
and 38%, respectively. The mode-beating linewidth of the proposed QD mode-locked laser (MLL) was measured less
than 20 KHz. We have interpreted that four-wave-mixing (FWM) process and other nonlinear effects within the QD
waveguide gain materials make the major contributions to lock the phase the longitudinal modes of the QD Fabry-Perot
cavity together to achieve this strong self-pulsation process.
We demonstrated an ultra-broadband wavelength converter based on co-polarized dual-pumping four-wave mixing
technique in a dispersion-flattened photonic crystal fiber. Over 380-nm wavelength conversion range from 1260 nm to
1640 nm has been achieved. By sweeping the wavelengths of the second pump laser, we have obtained the relationship
between the wavelength conversion efficiency and the converted data signals, which are consistant with our theoretical
analysis. The OSNR of the converted data signals are up to 30 dB.
We have demonstrated a continuum-wave (CW) supercontinuum (SC) fiber light source with over 1000 nm bandwidth
based on a low-cost erbium/ytterbium co-doped double-cladding fiber ring cavity laser. Based on the observation to the
SC evolvement, we have experimentally analyzed the detailed contributions of several nonlinear effects within highly
nonlinear dispersion-shifted fiber (HNLF). Our experimental results have clearly indicated that four-wave mixing (FWM)
and stimulated Raman scattering (SRS) play key roles in CW-pumped SC generation. At the same time, self-phase
modulation (SPM) mainly contributes to generate new frequency components near the peaks that appear in the form of
the spectra broadening while cross-phase modulation (XPM) enhances the broadening of peaks.
We have designed, fabricated and characterized self-assembled InAs/InGaAsP QD-waveguide devices around 1.55 μm.
In order to obtain optimal performance, we have investigated several QD-based semiconductor optical amplifiers
(SOAs) / lasers with different core geometry and doped profiles. To make the fair comparison between QD-SOA and
QW-SOA, InAs/InGaAsP QW-SOAs with the same structure and the doped profiles have been designed and
characterized. The experimental results indicate the QD-SOA is much better than QW-SOA in term of optical spectral
bandwidth, temperature sensitivity and output power stability. The
3-dB and 10-dB bandwidths of the amplified
spontaneous emission (ASE) spectra of the QD-SOA are 150 nm and 300 nm around 1520 nm. By using CW pump and
probe signals we have demonstrated a non-degenerated four-wave mixing (ND-FWM) process and the experimental
results indicate that the asymmetry of the FWM conversion efficiencies is eliminated by using the QD-SOA. To make
use of the inhomogeneous broadening which is one of the specific properties of QD waveguide devices, we have
designed and investigated the QD-based multi-wavelength semiconductor laser. A stable multi-wavelength laser output
with a 93-channel multi-wavelength laser with maximum channel intensity non-uniformity of 3-dB were demonstrated
on the basis of a single InAs/InGaAsP QD F-P cavity chip. All channels were ultra-stable because of the inhomogeneous
gain broadening due to statistically distributed sizes and geometries of self-assembled QDs.
Optical fiber sensors have shown great potentials for aerospace applications. But two issues need to be addressed before
these applications can be realized. One is how to reliably implement optical sensors in the air vehicles. The other is the
need of compact, low weight sensor interrogation systems. We propose to use planar lightwave circuits (PLC) to address
the second issue. In this article, we report some of our results on the development of both echelle diffractive gratings
based sensor interrogator and arrayed waveguide gratings based sensor interrogators. Both approaches offer miniaturized
solutions for the development of optical fiber sensor interrogation systems.
Using an arrayed waveguide gratings (AWG) based demultiplexer, a simple channel gain equalizer can be designed. The gain equalization and blocking functions are realized by the hybrid waveguide based variable optical attenuators fabricated on the output waveguides of the demultiplexer. This paper discusses the operation principle of the design and presents some simulation results.
Use the method developed recently we calculate the bit-error-rate (BER) improvement as a function of transmitter extinction ratio and the optical link noise parameter.
Quantum operator algebra related to Jaynes-Cummings model is developed to design multi-reflector resonant bandpass filters for the first time. Transmittance and reflectance spectra of these filters are givens with analytic expressions. The results are found in agreement with those based on the existing filter design method. By selecting parameters such as r and N, designed filters can achieve a target spectrum profile with flat-top, large bandwidth, and minor ripples.
By using two orthogonally-polarized pump beams, an ultrabroad tunable wavelength converter is demonstrated with uniform efficiency and equalized signal-to-noise ratio (SNR) through four-wave mixing (FWM) in an 1500-nm semiconductor optical amplifier (SOA). This device allows the conversion of the input data signal to lower or higher frequencies with nearly-constant conversion efficiency and SNR over a 10.66 THz tuning range. This result is a significant improvement of both the conversion efficiency and the SNR as compared with the conventional FWM-based wavelength converters. We have also investigated the effect of parameters of both input power and wavelength of pump P2 on conversion efficiency and SNR of the wavelength-converted signals.
A widely tunable, narrow-linewidth, simultaneous triple-wavelength oscillation erbium-doped fiber ring laser (EDFRL) has been developed. The EDFRL can produce double-wavelength oscillations with the same linear-polarization output, as well as another widely tunable wavelength oscillation with orthogonal linear-polarization from 1522.2 nm to 1595.9 nm. The long-term stability of the triple-wavelength output was observed with a high signal-to-noise ratio of larger than 40 dB. By using this EDFRL in combination with a 1550-nm semiconductor optical amplifier (SOA), an ultrabroad tunable wavelength converter is demonstrated with uniform efficiency and equalized optical signal-to-noise ratio (OSNR) over a 9.1 THz tuning range through four-wave mixing (FWM) in a SOA. This result is a significant improvement of both the conversion efficiency and the SNR as compared with the conventional FWM-based wavelength converters. We have also investigated the effect of both input power and wavelength of pump P2 on conversion efficiency and OSNR of the wavelength-converted signals
We present a simple method to generate a stable high-power (> 30 dBm) multi-wavelength ytterbium/erbium co-doped double-cladding fiber ring laser source at room temperature. This method is based a wavelength-dependent filter through spatial mode beating between the LP01 and LP11 modes within the multimode fiber section. We also investigate the relationship between the lasing wavelengths and the length of the ytterbium/erbium fibers (YEFs), the number of lasing wavelength lines dependent on the total pumping power level and the polarization states, and the characteristics of both the wavelength switching operation and the total output power. Eight simultaneous lasing wavelengths with 0.78 nm spacing were generated at room temperature.
We have described a high-power hybrid fiber amplifier, which comprising an erbium / ytterbium co-doped double-cladding fiber amplifier (EYCDFA) as a post-amplifier and a conventional erbium-doped fiber amplifier (EDFA) as a pre-amplifier. At the signal wavelength of 1550 nm, the signal gains of up to 71 dB and the maximum output powers of 36.4 dBm or 4.37 W have been demonstrated when the total pump laser power was 12.3 W.
We have developed a widely tunable, narrow-linewidth, simultaneous triple-wavelength oscillation erbium-doped fiber ring laser (EDFRL), which can produce double-wavelength oscillations with the same polarization output, as well as another widely tunable wavelength oscillation with orthogonal polarization from 1522.2 nm to 1595.9 nm. By using this EDFRL along with a method of measuring polarization-mode dispersion (PMD) in optical fibers based on a broad-band orthogonal-pump four-wave mixing in a semiconductor optical amplifier (SOA), we have measured the PMD values of optical fibers, which are in good agreement with values measured by means of commercial PMD testing equipment. We have also proposed several novel devices for in-field PMD measurement and monitoring on dense wavelength-division multiplexed (DWDM) traffic-carrying links, which will significantly reduce the cost and time of the PMD testing in the running DWMD networking systems.
A novel polarization scrambling optical signal-to-noise ratio (OSNR) monitor has been proposed and demonstrated. The OSNR monitor consists of a polarization scrambler, a polarizer and a photodetector. When the channel signal input to the polarizer is a linear polarization state aligned parallel (orthogonal) to the polarizer the output reaches its maximum (minimum). The OSNR can be obtained from the measured maximum and minimum of the output power if the sampling time is long enough to ensure a good coverage on Poincare sphere. The new OSNR monitor is polarization mode dispersion insensitive. The effect of polarizer extinction ratio and sampling time on the accuracy has been discussed.
We present a focal plane terahertz (THz) ray imaging system through use of a big-size <100> oriented ZnTe electro- optic crystal plate. Some concealed living insects and moving objects have been directly imaged and the dynamic processes of the THz field distributions are clearly displayed, both in real-time model. We also discuss the maximum and minimum sizes of the available imaging objects in this THz imaging system, and give ways to improve them.
Recently several THz sampling detection systems have been used to characterize the temporal and spatial distribution of free- space broadband, pulsed electromagnetic radiation (THz beams). Free-space sampling systems use electro-optic or magneto-optic sensors and a femtosecond laser system, to provide diffraction-limited spatial resolution, picosecond temporal resolution, and DC-THz spectral bandwidth. In this paper, we review recent progress and preliminary applications of free- space electro-optic and magneto-optic sensors.
An ultra-wideband, nonperturbing, electric-field sensor is being developed that uses the linear electro-optic effect and is packaged in a suitcase-sized optical configuration. The methodology has been demonstrated on the optical bench with ZnTe and used to measure an applied electric field. The immediate goal is to demonstrate the sensor up to 5 GHz and apply it to unknown fields in a configuration that uses DAST crystals, which are significantly more sensitive than ZnTe. This sensor eventually will be applied to the measurement of electromagnetic pulses, preserving the amplitude, polarization, and phase content of the detected signal. Preliminary measurements reported here verify the crystal sensitivity and response linearity. Variations in optical configurations are compared on the basis of sensitivity.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.