We previously demonstrated that the insulator-to-metal transition (IMT) temperature of vanadium dioxide (VO2) can be modified by engineering its defect density via ion implantation. Here, we quantitatively characterize the defect-induced changes to the IMT temperature and optical refractive indices with respect to the ion fluence. We identify an ion-fluence regime in which the IMT temperature can be modified without changes to the optical contrast between the pure phases, which is generally favorable for reconfigurable photonic applications. As a demonstration, we were able to lower the triggering temperature of a VO2-based optical limiter by 18 °C without trading off its transmittance contrast.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.