Two sets of c-Si solar cells varying in front side phosphorus doped emitters were produced by standard screen printing techniques. The first group of samples, 3121, was prepared by a combination of standard washing and a bath with a highly dilute HF before diffusion of n + -emitter. The second group of samples, 3122, was treated only with standard washing. A comparison of solar cell conversion efficiency and results from a noise spectroscopy, microplasma, and electroluminescence presence are presented. As was already shown in previous publications noise spectral density reflects the quality of solar cells, and thus represents an alternative advanced cell diagnostic tool. Our results confirm this relationship and moreover bring clear evidence for the maximum spectral noise voltage density being related to the emitter structure. The best results were reached for the group of solar cells in sample 3122, which was treated only with standard washing.
Two sets of c-Si solar cells varying in front side phosphorus doped emitters were produced by standard screen
printing technique. The first group of samples 3121 was prepared by combination of standard washing and bath with
and highly dilute HF before diffusion of n+-emitter. The second group of samples 3122 was treated only with standard
washing.
This paper brings the comparison of solar cell conversion efficiency and results from a noise spectroscopy and
microplasma presence. As it was already shown in previous publications [1-3] noise spectral density reflects the quality
of solar cells and thus it represents an alternative advanced cell diagnostic tool. Our results confirm this relationship and
moreover bring the clear evidence for the maximum spectral noise voltage density being related with the emitter
structure. The best results were reached for a group of solar cell with of samples 3122 was treated only with standard
washing.
A non-destructive method of reliability prediction for PN junction microelectronic devices is presented.
Transport and noise characteristic of forward biased semiconductor lasers diodes GaSb based VCSE
(Vertical Cavity Surface Emitting) lasers were prepared by Molecular Beam Epitaxy were measured in order
to evaluate the new MBE technology.
This paper is intended to present the results of our experimental study of three new types of silicon solar cells G1, G3
and G5. The study is based on an analysis of the device transport and noise characteristics. This analysis shows that
better quality (lower voltage noise spectral density) is exhibited by the structure of the groups of G3 specimens, this
junction (of a thickness of about 1 um) is etched away from the rear side.
Three different sets of semiconductors light active devices were by low frequency noise diagnostic described. In the first set the low frequency noise of 2.3 μm CW GaSb based Laser Diodes was measured, in set II the noise characteristic of forward biased silicon monocrystalline solar cells were measured and in set III the noise characteristic of forward biased Si:H amorphous solar cells were measured. The results of noise measurement in all systems were compared.
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