We present our approach to measure the profile of nonuniformly bent GaN epi-wafers grown on sapphire substrates. By
using a laser displacement sensor, the position of the epi-wafer is accurately measured and mapped. From the measured
profile data, analysis of stress distributions over the nonuniformly bent wafer is performed by using a theoretical model.
We show the result of theoretical analysis of how the stress tensors distribute over a wafer. The estimated stress tensors
are related with optical properties such as photoluminescence of the wafer.
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