Compared with the edge emission laser, the vertical-cavity surface-emitting laser (VCSEL) with better beam quality can
be performed more efficiently coupling with optical fiber. The 650nm~670nm wavelength VCSEL can be widely used
in plastic optical fiber (POF) network source. This paper introduces a new kind VCSEL with new structure, of which the
thermal characteristic is better than tradition device. In the special structure of the laser, the thickness of the substrate
under the active region is lower, the heat generated by the laser can be faster transferred to the heat sink and the cooling
effect is enhanced. In addition, the series resistance of the device is smaller and the heat produced by the device is
further reduced. Through comparative test with the traditional VCSEL, the light output power of the device with new
structure is increased by more than 20%.
We designed a distributed Bragg reflector mirror with a double-wavelength reflection, which can be used into opticallypumped
vertical external cavity surface emitting lasers. This kind of mirror can reflect both the lasing light as a
resonance mirror and the pumping light to reflect the pumping light back into absorbing area for increasing the
absorption efficiency and improving the thermal characteristics of the laser device. By using GaAs/AlGaAs
heterostructure layers and material data, the optical characteristics of the distributed Bragg reflector mirror with a double
wavelength reflection at two peaks was calculated. From the calculated results, the two reflection peaks occur at 808nm
and 980nm just as the structure design. The reflectivity can be more than 99% for 25-pair DBR. The reflection band
width is about 20nm and 25nm for the 808nm and 980nm peaks respectively. This can give a flexibility selection for the
double-wavelength distributed Bragg reflector structure design.
Nowadays, with its mature progress, the 790 nm - 1000 nm wavelength semiconductor laser is widely used in the fields
of laser machining, laser ranging, laser radar, laser imaging, laser anti-counterfeit, biomedical and etc. Best of all, the
980 nm wavelength laser has its widespread application in the pumping source of Er3+ -doped fiber amplifier, optic fiber
gyroscopes and other devices. The output wavelength of the fiber amplifier which takes the 980 nm wavelength laser as
its pumping source is between 1060 nm and 1550 nm. This type of laser has its extremely wide range of applications in
optical communication and other fields. Moreover, some new application domains keep constantly being developed. The
semiconductor laser with the dual-channel ridge wave guide and the 980 nm emission wavelength is presented in this
paper. In our work, we fabricated Lasers with the using of multi-quantum well (MQW) wafer grew by MBE, and the PL-wavelength
of the MQW was 970 nm. The standard photofabrication method and the inductively coupled plasma (ICP)
etching technology are adopted in the process of making dual-channel ridge wave guide with the width of 4 μm and
height of 830 nm. In the state of continuous work at room temperature, the laser could output the single mode beam of 70
mW stably under the current of 100 mA. The threshold current of the laser diode is 17 mA and the slope efficiency is
0.89 W/A. The 3 dB spectrum bandwidth of the laser beam is 0.2 nm. This laser outputs its beam by a pigtail fiber on
which Bragg grating for frequency stabilization is carved. The laser diode, the tail fiber, and the built-in refrigeration and
monitoring modules are sealed in a 14-pin butterfly packaging. It can be used directly as the pumping source of Er3+ -
doped fiber amplifier or optic fiber gyroscopes.
Semiconductor lasers at wavelengths around 1.3μm are widely used for optic communications. For GaInNAs, the
incorporation of nitrogen in the active layer can reduce the band-gap energy and allow emission wavelengths as long as
1.3μm. Ridge waveguide GaInNAs strain single-quantum-well lasers were fabricated with pulsed anodic oxidation
(PAO). Using the technology PAO, we prevented the damage from the ion bombardment in the procedure of sputtering
silicon dioxide used for building the insulating film. The output power of the laser with a wavelength of 1.31μm reached
14mW in CW mode at room temperature. The threshold-current was 18mA and its density was 360A/cm2. The
characteristic temperature of lasers was 135.1K and the quantum efficiency reached 76%.
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