We collect the scorpions, Isometrus maculates, in different instars to analyze the
photoluminescence (PL), micro‐structure of cuticles and their correlation. The photoluminescence is
excited by 405 nm solid laser in room temperature and detected by BWtek BRC 112E spectrometer. The
result shows that the intensity of photoluminescence positively correlate to instars of scorpion. The
images of micro‐structures of cuticles captured by scanning electron microscope (SEM) present the
multilayer structure in detail. The samples are prepared in small piece to ensure that the PL and SEM
data are caught from the same area. The correlation between instars and intensity of
photoluminescence is explained according to micro‐structures via the thin‐film optics theory.
The deformed potential structure of CdSe/ZnS core/shell quantum dots (QDs) was analyzed by calculating precise state energies and state functions. Exactly how an external electric field affects the photoluminescence was also studied. Additionally, the tilt potential structure induced by the external electric field, commonly referred to as the quantum-confined Stark effect, was calculated to account for the observed blue and red shifts. Experimental results indicated that the deformation also includes a bend, which is attributed to the shape of a QD. Calculations of the localization of electrons of the foregoing phenomena closely correspond to the experimental data.
Optical quality PMMA thin film layers including different concentrations of 3nm CdSe/ZnS and 5 nm TiO2
semiconductor quantum dots have been made by spin coating method. Their optical properties show evident
consequences of the confinement effects with wavelength bandgap shifting for both types of QDs. The confinement
effects are more pronounced for CdSe/ZnS QDs than for TiO2 QDs. Layers including CdSe/ZnS QDs exhibit a strong
luminescent behavior centred on 560nm with a stock-shift in front of the first exciton absorption peak.
In this article, we predicted the optical properties of the thin film including quantum dots according to the mathematic
mode which is based on the quantum theory. The method consists of two parts. The first one is the classical explanation
for the interaction between light and matters. It takes care of the interaction as dipoles and electromagnetic wave and
describes clearly the profile of spectrum. Another part is the transition of quantized energy, absorption and spontaneous
emission which exhibits singular valleys or peaks in spectrum. For the reason of quantum theory, we have to verify Bohr
radius of each crystallized material to make sure that the particle size is small enough to present quantum effect. After
constructing the spectrum, the data significantly presents optical properties of matters, we try to re-define the effective
refractive index of the thin film including quantum dots by the spectrum which is the result of light affected by matters.
We have designed and fabricated the low-polarizing X-plate to increase the luminous throughput for
LED projector. We calculate reflectivity characteristic of X-plate as a function of the wavelength at
different angles of incidence from air of unpolarized light. A new way to design filter to control the
title effect of thin film filters. The wavelength shift of the new design for reflected red filter and
reflected blue filter at the angle of 45° ± 8° is 16 nm and 14 nm, respectively.
point. This monitoring method is derived from a traditional optical monitor structure. The corresponding error
compensations were applied to get good output. Another optical monitoring system is also demonstrated to extract the
temporal phase change of the reflection coefficient of the growing film stack. A vibration and air turbulence insensitive
polarization interferometers was used in this system to directly detect fluctuating phase and magnitude of the reflection
coefficient of a growing film stack as well as the real time optical admittance at normal incidence.
An optical system to extract the reflection coefficient and optical admittance of film stack is presented. Both reflection
phase and reflection magnitude intensity from the tested film stack were measured under normal incidence of the light.
Two dimensional refractive index and thickness distribution of each layer in multilayer thin films can be obtained by the
analysis of the reflection coefficients or optical admittance of multi-wavelengths. A novel monitoring method for the thin
film deposition using the reflection coefficient and optical admittance loci as the thickness grows is also proposed to
achieve better performance in this article.
Depending on the minimum size of their micro/nano structure, thin films can exhibit very different behaviors and optical
properties. From optical waveguides down to artificial anisotropy, through diffractive optics and photonic crystals, the
application changes when decreasing the minimum feature size.
Rigorous electromagnetic theory can be used to model most of the components but when the size is of a few nanometers,
quantum theory has also to be used. These materials including quantum structures are of particular interest for other
applications, in particular for solar cells, because of their luminescent and electronic properties.
We show that the properties of electrons in multiple quantum wells can be easily modeled with a formalism similar to
that used for multilayer waveguides. The effects of different parameters, in particular coupling between wells and well
thickness dispersion, on possible discrete energy levels or energy band of electrons and on electron wave functions is
given. When such quantum confinement appears the spectral absorption and the extinction coefficient dispersion with
wavelength is modified. The dispersion of the real part of the refractive index can then be deduced from the Kramers-
Krönig relations. Associated with homogenization theory this approach gives a new model of refractive index for thin
films including quantum dots. Absorption spectra of samples composed of ZnO quantum dots in PMMA layers are in
preparation are given.
The sensitivities of two optical monitoring methods were discussed in monitoring the growth of a thin film on different pre-coatings. One of the monitoring methods, the most popular one, based on the transmittance or reflection shows the monitoring diagram as runsheet. The other one, a new optical monitoring method called "Admittance Real-time Monitoring" (ARM) based on the equivalent optical admittance shows the monitoring diagram as admittance diagram. The sensitivity varies with the growth of the film and deeply affects the precision of optical monitoring. In this investigation, the relationship between sensitivity and pre-coating and the relationship between sensitivity and film thickness were compared in runsheet and admittance diagram.
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