This paper is described about fabrication and evaluation of the beam splitter used in an EUV region. This beam splitter
has to be as a free standing, stress control of multilayer is main subject. It is investigated that the dependence of the
intrinsic stress between a RF (DC) sputtering power and an argon pressure during the thin film deposition processes. At
the low argon pressure, molybdenum and silicon films showed both high compressive stress. However, at the high argon
pressure, the molybdenum and silicon films showed low tensile stress and low compressive stress, respectively.
Therefore, it was possible to fabricate a multilayer films with low tensile stress by optimizing the argon pressure and
applied RF power during deposition. Conclusively, a free-standing semitrasparent multilayer film of 8x22 mm area was
fabricated. It shows high reflectance and transmission of near 25% at the wavelength of EUV region.
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