The minority carrier transport length (L) is a critical parameter limiting the performance of inexpensive Cu2O-ZnO photovoltaic devices. In this work, this length is determined for electrochemically deposited Cu2O by linking the optical carrier generation profile from front and back incident-photon-to-electron conversion efficiency (IPCE) measurements to a one dimensional carrier transport model. A transport length of ~ 400 nm is estimated. This critical length explains the losses typically presented by these devices. The consequences of this L on device design with the aim of improving solar cell performance are described.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.