TiO2 thin film UV detector was prepared by DC reactive magnetron sputtering method, and the response curves of the thin film detector under different bias voltages were measured. The relationship between the photocurrent of the detector and the wavelength of the irradiated light and the time response of the TiO2 UV detector were studied.
ZnMgO/ZnO/ZnMgO heterojunctions as well as ZnMgO/ZnO/ZnMgO heterojunctions with low-temperature ZnO buffer layers were prepared on (100) Si substrates by magnetron sputtering. The crystal structures of the heterojunction films grown under the optimized process parameters were good, and the near-band edge emission peaks of the ZnMgO layer were observed in the ZnMgO/ZnO/ZnMgO heterojunction by PL test.
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