Modeling of waveguide AlInAs avalanche photodiodes is reported in this work. Based on beam propagation method analyses, the waveguide design and evanescent coupling are investigated at first. The APD dark- and photo-response and multiplication gain are further simulated based on a drift-diffusion method. The frequency response and bandwidth are also evaluated based on carrier transit analysis formalism. Modeling results of I-V curves, multiplication gain, breakdown voltage, excess noise factor, -3dB bandwidth and gain-bandwidth product are presented with some consistently compared with reported experimental demonstration.
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