Dr. Xumou Xu Profile

Dr. Xumou Xu

Member of Technical Staff at Applied Materials Inc

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Author

Publications (11)

Proceedings Article | 23 March 2012 Paper

Model calibration and slit position effect on full-mask process and proximity correction for extreme ultraviolet lithography

Hsu-Ting Huang, Huixiong Dai, Ali Mokhberi, Xumou Xu, Anwei Liu, Chris Ngai

Proceedings Volume 8322, 83221K (2012) https://doi.org/10.1117/12.916502

KEYWORDS: Calibration, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Lithography, Finite element methods, Metals, Ultraviolet radiation, Back end of line

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Proceedings Article | 23 March 2011 Paper

Self-aligned triple patterning for continuous IC scaling to half-pitch 15nm

Yijian Chen, Ping Xu, Liyan Miao, Yongmei Chen, Xumou Xu, Daxin Mao, Pokhui Blanco, Chris Bencher, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731P (2011) https://doi.org/10.1117/12.881645

KEYWORDS: Photomasks, Optical lithography, Oxides, Etching, Lithography, Silicon, Immersion lithography, Electron beam lithography, Line width roughness, Line edge roughness

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Proceedings Article | 23 March 2011 Paper

Spatial frequency multiplication techniques towards half-pitch 10nm patterning

Yijian Chen, Yongmei Chen, Liyan Miao, Ping Xu, Xumou Xu, Hao Chen, Pokhui Blanco, Raymond Hung, Chris Ngai

Proceedings Volume 7973, 79731T (2011) https://doi.org/10.1117/12.881661

KEYWORDS: Etching, Optical lithography, Oxides, Silicon, Lithography, Amorphous silicon, Image processing, Spatial frequencies, Electron beam lithography, Immersion lithography

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Proceedings Article | 23 March 2011 Paper

Recessive self-aligned double patterning with gap-fill technology

Yijian Chen, Xumou Xu, Yongmei Chen, Liyan Miao, Hao Chen, Pokhui Blanco, Chris Ngai

Proceedings Volume 7973, 79731S (2011) https://doi.org/10.1117/12.881658

KEYWORDS: Etching, Double patterning technology, Oxides, Lithography, Photomasks, Optical lithography, Back end of line, 193nm lithography, Image processing, Front end of line

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Proceedings Article | 1 April 2009 Paper

Sub-20 nm trench patterning with a hybrid chemical shrink and SAFIER process

Yijian Chen, Xumou Xu, Hao Chen, Liyan Miao, Pokhui Blanco, Man-Ping Cai, Chris Ngai

Proceedings Volume 7273, 72733I (2009) https://doi.org/10.1117/12.814382

KEYWORDS: Line edge roughness, Photoresist processing, Semiconducting wafers, Optical lithography, Etching, Photomasks, Scanning electron microscopy, Chemical reactions, Lithography, Manufacturing

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Proceedings Article | 16 March 2009 Paper

Demonstration of 32nm half-pitch electrical testable NAND FLASH patterns using self-aligned double patterning

Shiyu Sun, Chris Bencher, Yongmei Chen, Huixiong Dai, Man-Ping Cai, Jaklyn Jin, Pokhui Blanco, Liyan Miao, Ping Xu, Xumou Xu, James Yu, Raymond Hung, Shiany Oemardani, Osbert Chan, Chorng-Ping Chang, Chris Ngai

Proceedings Volume 7274, 72740D (2009) https://doi.org/10.1117/12.814403

KEYWORDS: Lithography, Resistance, Etching, Double patterning technology, Photomasks, Optical lithography, Scanning electron microscopy, Oxides, Photoresist materials, Line edge roughness

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Proceedings Article | 16 March 2009 Paper

Alignment and overlay improvements for 3x nm and beyond process with CVD sidewall spacer double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Shiyu Sun, Xumou Xu, Chris Ngai

Proceedings Volume 7274, 72743G (2009) https://doi.org/10.1117/12.814376

KEYWORDS: Optical alignment, Semiconducting wafers, Photomasks, Double patterning technology, Optical lithography, Scanners, Etching, Chemical vapor deposition, Manufacturing, Lithography

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Proceedings Article | 13 March 2009 Paper

Implementing self-aligned double patterning on non-gridded design layouts

Huixiong Dai, Jason Sweis, Chris Bencher, Yongmei Chen, Jen Shu, Xumou Xu, Chris Ngai, Judy Huckabay, Milind Weling

Proceedings Volume 7275, 72751E (2009) https://doi.org/10.1117/12.814423

KEYWORDS: Photomasks, Double patterning technology, Etching, Scanners, Lithography, Manufacturing, Logic, Optical lithography, Electronic design automation, Optical proximity correction

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Proceedings Article | 1 April 2008 Paper

Double patterning combined with shrink technique to extend ArF lithography for contact holes to 22nm node and beyond

Xiangqun Miao, Lior Huli, Hao Chen, Xumou Xu, Hyungje Woo, Chris Bencher, Jen Shu, Chris Ngai, Christopher Borst

Proceedings Volume 6924, 69240A (2008) https://doi.org/10.1117/12.772024

KEYWORDS: Double patterning technology, Etching, Lithography, Amorphous silicon, Scanning electron microscopy, Tin, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Extreme ultraviolet

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Proceedings Article | 7 March 2008 Paper

45nm and 32nm half-pitch patterning with 193nm dry lithography and double patterning

Huixiong Dai, Chris Bencher, Yongmei Chen, Hyungje Woo, Chris Ngai, Xumou Xu

Proceedings Volume 6924, 692421 (2008) https://doi.org/10.1117/12.772260

KEYWORDS: Etching, Double patterning technology, Metals, Photomasks, Optical lithography, Lithography, Line width roughness, Overlay metrology, Line edge roughness, Chemical vapor deposition

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Proceedings Article | 27 March 2007 Paper

RET application in 45-nm node and 32-nm node contact hole dry ArF lithography process development

Xiangqun Miao, Xumou Xu, Yongmei Chen, Chris Ordonio, Chris Bencher, Chris Ngai

Proceedings Volume 6520, 65201F (2007) https://doi.org/10.1117/12.707782

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Etching, Resolution enhancement technologies, Double patterning technology, Scanning electron microscopy, Semiconducting wafers, Neodymium, Data modeling

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Showing 5 of 11 publications

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