The high-performance InGaAsSb/GaAsSb/GaAs lasers emitting 1300 nm is simulated. Compared to the type-II quantum well GaAsSb/GaAs, In0.48Ga0.52As0.98Sb0.02/GaAs0.98Sb0.22 has large bandoffset which will offer a better electron confinement. And GaAs0.98Sb0.22 can reduce the effective strain of the highly lattice mismatched InGaAsSb quantum well. The transparent carrier densities of active unit is as low as 0.72×1018 cm-3. The threshold current and slope efficiency of the InGaAsSb/GaAsSb/GaAs three quantum wells laser is equal to 83 mA and 0.62W/A. When the current is over 93 mA, external efficiency will reach 0.72. In order to further enhance the performance of InGaAsSb/GaAsSb quantum well (QW) laser, the asymmetric (0.5 μm/1.5 μm) waveguide structure is also studied.
In this paper, we report that Mg-doped ZnO nanowires were synthesized on ITO substrate by electrodeposition using a
mixture of an aqueous solution of zinc acetate, hexamethylenetetramine, and magnesium acetate for the first time. SEM,
EDS and XRD were used to investigate the structural properties and chemical composition. and PL spectrum was
measured for optical characterism. Compared with undoped ZnO nanowires, the band edge emission shifts from 380 nm
to 375 nm.
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