Copper nitride thin films were deposited on glass substrates by reactive DC (direct
current) magnetron sputtering with 0.8Pa N2-gas partial pressure (the total pressure was
1Pa), 100°C substrate temperature and different DC powers. X-ray diffraction
measurements show that the films are composed of Cu3N crystallites with anti-ReO3
structure and exhibit preferential orientation to the [111] direction. The intensity of the
preferred crystalline orientation of the films increased with DC power. It is found that the
DC power not only affects the crystal structure of the Cu3N films but also affects its
resistivity. The resistivity of Cu3N films decreased sharply with increasing of the DC
power, reaching a value 1.33Ωcm. From this work, it is concluded that the optimum DC
sputtering power for producing high-quality and well [111]-oriented Cu3N films on glass
substrates is 80W, with 0.8Pa N2-gas partial pressure and 1000C substrate temperature.
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