Ms. Xinayan Wang Profile

Xinayan Wang

at Beijing Univ of Posts and Telecommunications

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Proceedings Article | 6 December 2005 Paper

Study of low temperature GaAs/InP wafer bonding

Xingyan Wang, Hui Huang, Qi Wang, Xiaomin Ren, Yongqing Huang

Proceedings Volume 6020, 60200I (2005) https://doi.org/10.1117/12.635893

KEYWORDS: Wafer bonding, Semiconducting wafers, Gallium arsenide, Interfaces, Luminescence, Wafer-level optics, Annealing, Scanning electron microscopy, Gallium, Laser bonding

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The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic. The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. In this method, the surfaces of two wafers are etched by sulfuric solution. Then following a thermal annealing process. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic through transmission electron microscope (SEM), interface I-V curve, X-ray diffraction (XRD), photoluminescence (PL) spectra, and so on. The optical characteristic of In_0.53Ga_0.47As/InP multi-quantum wells (MQWs) grown on an InP substrate, which was bonded to GaAs substrate was investigated by measuring photoluminescence (PL) spectra at room temperature. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. And the PL intensities of the bonding sample increased about 50%. The bonding strength was found to be sufficiently high and could withstand the subsequent etching and polishing procedures of the bonded wafers. This low temperature wafer bonding method is very attractive to realize optical devices such as lasers, photodetectors and optical waveguides on lattice-mismatched substrates.

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