A few yield loss issues in AlInGaN-based LED manufacturing are addressed in this paper. V-defects initiated from N-type GaN, multiple quantum well region, and P-type GaN are classified by their size and depth. Their impacts on device performance are discussed and the effective ways to eliminate or reduce V-defects are presented in detail. An approach using multiple composite inter-layers in a highly doped Si-GaN layer to reduce cracks is proposed. Each individual composite inter-layer reduces the stress accumulated from the layer underneath and thus keeping the N-GaN layer free from crack. The composite inter-layer is a pair of InxGa1-xN/GaN thin layers grown at low temperature (LT). Design rules and growth conditions are also discussed. Other issues which may cause yield loss or troublesome in AlInGaN LED manufacturing are briefly touched such as wafer color non-uniformity, bad cut in chip dicing, wavelength and light output correlation at wafer, chip and lamp level.
If InGaN LEDs are going to replace current lighting solutions, they must have several money saving characteristics such as: high efficiency, low cost, and long reliability. We will take a look at the reliability aspect of the LEDs based on a comparison of different types of die-attach epoxies used to package the LED's.
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