High-temperature stability of lasing wavelength of GaAsSb/GaAs quantum well (QW) lasers grown by metal-organic
vapor phase epitaxy will be demonstrated. According to the best of our knowledge, this is the first trial of using
triethylgallium (TEGa) as the precursor to grow QW at low temperature (525°C). The lasing wavelength ranges from
1117 to 1144 nm and varies with temperature (dλ/dT) from 0.24 to 0.287 nm/K. These values are lower than other
previously reported results. The QW grown at high temperature (600 °C) by using trimethylgallium (TMGa) is also
examined. The lasing wavelength is 1125.6 nm at room temperature and dλ/dT is 0.36 nm/K, which is higher than those
lasers grown at lower temperature.
KEYWORDS: Digital watermarking, Digital imaging, Virtual colonoscopy, Image compression, Visualization, Cryptography, Image processing, Medical imaging, Image filtering, Computing systems
A digital image copyright protection scheme based on visual cryptography (VC) and singular value decomposition (SVD) techniques is proposed. In the proposed scheme, a master share is first constructed by applying SVD to a host image. Then, the master share is used together with a secret image to construct an ownership share, according to a two-out-of-two VC scheme. The secret image for ownership identification can be revealed by stacking the master share, and the ownership share. The proposed scheme embeds the secret image without modifying the host image. In addition, the hidden secret image can be extracted without resorting to the original host image and the aid of computers. Experimental results show that the proposed scheme, compared with existing schemes, achieves stronger robustness against several common attacks.
The RF-sputtered ITO layers were used as the transparency contact layer of the MSM PDs. The plasma gas would alter
the optical transmittance and the schottky barrier height between the ITO layer and InGaAsN absorption layer. Three
kinds of plasma gases were studied including Ar, Ar/N2, and Ar/O2. The Schottky barrier heights were 0.510 eV, 0.572
eV, and 0.574 eV when using Ar, (Ar/N2), and (Ar/O2) as the plasma gas; besides, the optical transmittances were
92.56%, 93.12% and 96%, respectively. Although the ITO film sputtered in the Ar/O2 ambient has highest transmittance
and Schottky barrier height, the high resistivity limited the photocurrent of the photodetectors; it is almost three orders
lower than the others. Consequently, using the Ar/N2 as the plasma gas would be a suitable choice regarding the MSM
photodetector application. The highest contrast ratio between photo-current and dark-current of the InGaAsN MSM
photodetectors were 5, 25 and 12 (measured under 0.2V) using Ar, Ar/N2, and Ar/O2 as the plasma gases.
Recently, GaAs-based long wavelength lasers have attracted much attention owing to their advantages such as low
substrate cost, mature AlGaAs/GaAs DBR and the high conduction band offset. Among the GaAs-based material system,
highly compressive strained InGaAs would be a suitable candidate for the 1300nm VCSEL application while combined
with the large gain-cavity detuning technique. In this work, we have successfully fabricated the highly compressivestrained
InGaAs broad-area lasers grown by MOVPE. After optimized the epitaxial parameters, these lasers were
operating at 1219.56nm with narrow line width of 0.08nm. The InGaAs laser could be operated under continuously
waving (CW) situation at 20°C, while its threshold current density Jth was 140A/cm2. To our knowledge, the
demonstrated InGaAs QW laser has the lowest Jth/QW =46.7 A/cm2. The fitted characteristic temperature (T0) was
146.2K indicating the good electron confinement ability. In addition, by lowering the growth temperature to 475°C, we
have also obtained the InGaAs/GaAs double quantum wells whose PL peak was at 1244.5nm and FWHM was 43meV.
These good characteristics indicate the possibility of fabricating InGaAs VCSELs lasing at 1300nm.
We propose a new method to enhance solitons' robustness to polarization-mode dispersion (PMD) in a long-haul conventional single-mode fiber (SMF). The method is based on the utilization of four-wave mixing (FWM) effects of two principal polarization states of optical pulses. An intensively bound state of solitons can be achieved when the FWM effect is taken into account. It is proved numerically that the solitons with FWM are more adaptive to polarization-mode dispersion than the ones without FWM in the standard fiber links.
The enhancement of adaptive abilities of nonlinear optical pulses to polarization mode dispersion (PMD) is obtained by modulating breath-depth of two polarization states of the pulses. The breath-depth modulation is realized based on the interaction among self-phase modulation, cross phase modulation, group velocity dispersion and degenerate four-wave mixing, which results in making two polarization states of the pulses into a tighter state when nonlinear pulses propagate in optical fibers with high birefringence. Numerical results show that the transmission stabilities of modulated breath-depth optical pulses are improved in conventional fibers with random birefringence. The pulse broadening trend of the modulated breath-depth pulses induced by PMD is effectively suppressed by our proposed method. The symmetric output pulse shape is also reshaped in conventional fibers.
Nonlinear optical pulses with sub-picosecond width will exhibit the phenomena of timing jitter and pulse decay induced by the third-order dispersion and Raman self-frequency shift. The optical phase conjugation is proposed to compensate for the high-order dispersion and high-order nonlinear effect. However, the spectral phase conjugation can’t eliminate the time delay induced by Raman self-frequency shift and the temporal phase conjugation can’t avoid the pulse splitting into two pieces induced by the third order dispersion. Thus, the schemes of the combination of the spectral and temporal phase conjugation are supposed to use for recovering the distorted pulse and reducing the time delay induced by the third-order dispersion and Raman self-frequency shift. There exist the optimized schemes to deploy the relative position between the spectral phase conjugator and the temporal phase conjugator to obtain the optimization transmission qualities with the minimum penalty for timing jitter and pulse distortion. In addition, the spectral phase conjugator and temporal phase conjugator should be settled down after the midway and before the midway, respectively, in order to obtain the residual third-order dispersion to enhance the frequency red-shift trend of two polarization components after the temporal phase conjugator for reducing the time delay.
An optical phase conjugator is used to enhance the robustness of optical pulses to polarization dispersion. The
polarization components of optical pulses form a breather in birefringent fibers firstly and make a polarization
component along fast axis compressed through spectra inversion function of the optical phase conjugator. The two
polarization modes are compressed further due to the cross-phase modulation effect and trap each other fully in time
domain. The optical phase conjugator is required to settle down before higher birefringent fibers in order to suppress the
influence of birefringence effectively. The limit value of δ reaches 7.5 that can be suppressed by enhanced robustness of
the optical pulses by using the optical phase conjugator in the case that each polarization component is a fundamental
soliton. Moreover, the function of the optical phase conjugator will reduce the delay of optical pulses for a different
polarization angle.
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