To alleviate the difficulty of ion beam etching, it is essential to acquire the low gradient holographic photoresist grating
masks as well as the high gradient ones (i.e. the rectangular holographic photoresist grating masks). According to the ion
beam etching experiments, the low gradient photoresist grating masks can effectively eliminate the redeposition. The
control of the profile of holographic photoresist grating masks is investigated in this paper. Considering the effects of
developing time and temperature of the developer on the response of photoresist and adopting the combination of
computer simulation and experiments, a low gradient photoresist grating mask: 30% duty cycle at bottom and 65°
gradient can be fabricated. The study indicates the increase of the developing time causes the diminish of the threshold
volume of exposure while the increase of the slope of the linearity of photoresist response; the rise of the temperature of
the developer leads to both the increase of the threshold volume of exposure and the slope of the linearity of photoresist
response. As a result non-1:1 interferential exposure and low-temperature development are required in the fabrication of
low gradient photoresist grating masks. The 1:7 interferential exposure and 15°C- development have been adopted in this
experiment.
The fabrication of multilayer dielectric gratings was theoretically and experimentally investigated. The RCW (rigorous coupled-wave) method was adopted to theoretically analyze the influence, which is caused by the gratings profile and multilayer dielectric stack, on the diffraction efficiency. Researches on detecting principle and methods of the multilayer dielectric gratings were also tried to be carried out here. The spectral distributing of the zero order diffraction efficiency was used to judge the gratings profile, basing on the theoretical research and the calculating results by the RCW method. Detecting experiments have been conducted to compare the theoretical analyses; the results of this comparison may be helpful to instruct the detection of the gratings profile.
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