Dr. Vladimir A. Smagley Profile

Dr. Vladimir A. Smagley

Principle R&D Engineer at ANSYS ZEMAX

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Author

Publications (14)

Proceedings Article | 11 March 2024 Poster + Paper

Lens parameters optimization sensitivity prediction using Ansys Zemax multi-configuration composite feature

Xu Chen, Erin Elliot, Vladimir Smagley, Stefano Guazzotti, Po-Sheng Chiu, Chenfeng Gu, Allen Cheng, Xianglei Liu, David Vega

Proceedings Volume 12880, 128800W (2024) https://doi.org/10.1117/12.3003166

KEYWORDS: Relays, Lenses, Zemax, Monochromatic aberrations, Excel, Tunable filters, Total internal reflection, Spherical lenses, Optical filters, Mathematical optimization

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Proceedings Article | 2 March 2020 Presentation + Paper

Toward optimal workflow: software tools to simplify structural, thermal, and optical (STOP) simulation of systems

Erin Elliott, Vladimir Smagley, Matthias Schlich, Uday Mathur, Michael Humphreys, Sanjay Gangadhara

Proceedings Volume 11287, 112870D (2020) https://doi.org/10.1117/12.2545043

KEYWORDS: Mirrors, Finite element methods, Data modeling, Process modeling, Prisms, Thermography, Systems modeling, Beam steering, Gradient-index optics, Optical testing

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Proceedings Article | 18 June 2004 Paper

Resonant coupled-cavity effects in VCSELs with annular ring contacts

Gennady Smolyakov, Vladimir Smagley, Weiliang Chen, Marek Osinski

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540324

KEYWORDS: Vertical cavity surface emitting lasers, Metals, Gallium, Aluminum, Oxides, Refractive index, Interfaces, Semiconductors, Gallium arsenide, Oxidation

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Proceedings Article | 25 July 2003 Paper

Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs

Vladimir Smagley, Min Lu, Gennady Smolyakov, Petr Eliseev, Marek Osinski, Brian Riely, Hongen Shen, George Simonis

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482324

KEYWORDS: Gallium, Vertical cavity surface emitting lasers, Aluminum, Refractive index, Oxides, Gallium arsenide, 3D modeling, Quantum wells, Instrument modeling, Active optics

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Proceedings Article | 12 June 2002 Paper

Operator ordering of a position-dependent effective-mass Hamiltonian in lattice-matched semiconductor superlattices and quantum wells

Vladimir Smagley, M. Mojahedi, Marek Osinski

Proceedings Volume 4646, (2002) https://doi.org/10.1117/12.470524

KEYWORDS: Superlattices, Quantum wells, Interfaces, Aluminum, Semiconductors, Heterojunctions, Solids, Gallium arsenide, Excitons, Luminescence

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Proceedings Article | 14 July 2000 Paper

Design of InGaN/GaN/AlGaN vertical-cavity surface-emitting lasers using electrical-thermal-optical simulation

Marek Osinski, Vladimir Smagley, Chunsheng Fu, Gennady Smolyakov, Petr Eliseev

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391440

KEYWORDS: Vertical cavity surface emitting lasers, Resistance, Refractive index, Gallium nitride, Quantum wells, Diffusion, Continuous wave operation, 3D modeling, Optical simulations

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Proceedings Article | 12 November 1999 Paper

Simple theory of steam oxidation of AlAs

Marek Osinski, Tengiz Svimonishvili, Gennady Smolyakov, Vladimir Smagley, Pawel Mackowiak, Wlodzimierz Nakwaski

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370359

KEYWORDS: Oxides, Process control, Process modeling, Vertical cavity surface emitting lasers, Particles, Diffusion, Interfaces, Electronic components, Thermal modeling, Oxidation

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Proceedings Article | 12 November 1999 Paper

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Marek Osinski, Petr Eliseev, Jinhyun Lee, Vladimir Smagley, Tamoya Sugahara, Shiro Sakai

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370346

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum wells, Sapphire, Electroluminescence, Luminescence, Indium, Metalorganic chemical vapor deposition, Semiconductors, Diffusion

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Proceedings Article | 6 August 1999 Paper

Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method

Gennady Smolyakov, Vladimir Smagley, Wlodzimierz Nakwaski, Petr Eliseev, Marek Osinski

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356891

KEYWORDS: Vertical cavity surface emitting lasers, Gallium nitride, Refractive index, Quantum wells, Absorption, Active optics, Structural design, Mirrors, Laser resonators, Metals

Proceedings Article | 6 August 1999 Paper

3D electrothermal simulation of intracavity-contacted oxide-confined VCSELs operating at room temperature and at 77 K

Marek Osinski, Vladimir Smagley, Tengiz Svimonishvili, Gennady Smolyakov

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356896

KEYWORDS: Vertical cavity surface emitting lasers, Gallium arsenide, Cryogenics, Oxides, Computer simulations, Lutetium, Neon, Doping, Semiconductor lasers, Oxidation

Proceedings Article | 7 July 1998 Paper

Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers

Vladimir Smagley, Gennady Smolyakov, Petr Eliseev, Marek Osinski, Andrzej Przekwas

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316681

KEYWORDS: Oxides, Vertical cavity surface emitting lasers, Waveguides, Active optics, Semiconductor lasers, Numerical simulations, Electrodes, Dielectrics, Diodes, Laser development

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Proceedings Article | 22 June 1998 Paper

Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers

Marek Osinski, Vladimir Smagley, Gennady Smolyakov, Tengiz Svimonishvili, Petr Eliseev, George Simonis

Proceedings Volume 3419, 34190Q (1998) https://doi.org/10.1117/12.311010

KEYWORDS: Vertical cavity surface emitting lasers, 3D modeling, Optical simulations, Semiconductor lasers, Numerical modeling, Thermal modeling, Diodes, Diffusion, Waveguides, Data acquisition

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Proceedings Article | 6 June 1997 Paper

Comparison of models for calculation of optical gain in gallium nitride

Vladimir Smagley, Petr Eliseev, Marek Osinski

Proceedings Volume 2994, (1997) https://doi.org/10.1117/12.275555

KEYWORDS: Gallium nitride, Absorption, Laser damage threshold, Heterojunctions, Indium gallium nitride, Transparency, Optimization (mathematics), Neodymium, Gallium arsenide, Solids

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Proceedings Article | 1 May 1996 Paper

Analysis of impurity-related blue emission in Zn-doped GaN/InGaN/AlGaN double heterostructure

Petr Eliseev, Vladimir Smagley, Piotr Perlin, Philippe Sartori, Marek Osinski

Proceedings Volume 2693, (1996) https://doi.org/10.1117/12.238944

KEYWORDS: Phonons, Gallium nitride, Zinc, Luminescence, Indium gallium nitride, Diodes, Temperature metrology, Heterojunctions, Light emitting diodes, Electrons

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Showing 5 of 14 publications

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