Mr. Vlad Temchenko Profile

Vlad Temchenko

Process Engineer at Micron Technology Inc

SPIE Involvement:

Author

Area of Expertise:

Simulation of lithographic processes , Critical dimension and overlay metrology , Optical Proximity Correction , RET for lithographic processes

Publications (10)

Proceedings Article | 23 March 2011 Paper

Source and mask optimization applications in manufacturing

ChinTeong Lim, Vlad Temchenko, Ulrich Klostermann, Vitaliy Domnenko, Jens Schneider, Daniel Sarlette, Ingo Meusel, Dieter Kaiser, Ralf Ploss

Proceedings Volume 7973, 797322 (2011) https://doi.org/10.1117/12.879203

KEYWORDS: Optical proximity correction, Source mask optimization, Scanners, Lithography, Photomasks, Manufacturing, Photovoltaics, Fiber optic illuminators, Reticles, Resolution enhancement technologies

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Proceedings Article | 4 March 2010 Paper

Methods and challenges to extend existing dry 193nm medium NA lithography beyond 90nm

Jens Schneider, Andreas Greiner, ChinTeong Lim, Vlad Temchenko, Felix Braun, Dieter Kaiser, Tarja Hauck, Ingo Meusel, Dietrich Burmeister, Stephan Loehr, Susanne Volkland, Astrid Bauch, Hendrik Kirbach, Daniel Sarlette, Katrin Thiede

Proceedings Volume 7640, 76403G (2010) https://doi.org/10.1117/12.848207

KEYWORDS: Resolution enhancement technologies, Lithography, Optical proximity correction, Semiconducting wafers, Image processing, 193nm lithography, Chemical reactions, Scanners, Etching, Design for manufacturing

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Proceedings Article | 4 March 2010 Paper

Selective inverse lithography methodology

ChinTeong Lim, Vlad Temchenko, Martin Niehoff

Proceedings Volume 7640, 764034 (2010) https://doi.org/10.1117/12.845464

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Photovoltaics, Inspection, Manufacturing, Logic, 193nm lithography, Optical lithography, Reticles

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Proceedings Article | 16 March 2009 Paper

Manufacturability of ILT patterns in low-NA 193nm environment

ChinTeong Lim, Vlad Temchenko, Ingo Meusel, Dieter Kaiser, Jens Schneider, Martin Niehoff

Proceedings Volume 7274, 727439 (2009) https://doi.org/10.1117/12.814144

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Resolution enhancement technologies, Manufacturing, Lithographic illumination, Semiconducting wafers, Logic, 193nm lithography, Silicon

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Proceedings Article | 1 April 2008 Paper

Coupled-dipole modelling for 3D mask simulation

Vlad Temchenko, Chinteong Lim, Dave Wallis, Jens Schneider, Martin Niehoff

Proceedings Volume 6924, 69240W (2008) https://doi.org/10.1117/12.772572

KEYWORDS: Photomasks, Finite-difference time-domain method, Near field, Optical proximity correction, Polarization, Interfaces, 3D modeling, Lithography, Computer simulations, Semiconducting wafers

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Proceedings Article | 7 March 2008 Paper

Consideration of VT5 etch-based OPC modeling

ChinTeong Lim, Vlad Temchenko, Dieter Kaiser, Ingo Meusel, Sebastian Schmidt, Jens Schneider, Martin Niehoff

Proceedings Volume 6924, 69243D (2008) https://doi.org/10.1117/12.772585

KEYWORDS: Etching, Optical proximity correction, Data modeling, Process modeling, Calibration, Optics manufacturing, Critical dimension metrology, Lithography, Photoresist processing, Design for manufacturing

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Proceedings Article | 27 March 2007 Paper

Investigation of DFM-lite ORC approach during OPC simulation

Chin Teong Lim, Kai Peter, Vlad Temchenko, Dave Wallis, Dieter Kaiser, Ingo Meusel, Sebastian Schmidt, Martin Niehoff

Proceedings Volume 6520, 65204E (2007) https://doi.org/10.1117/12.711395

KEYWORDS: Optical proximity correction, Polishing, Design for manufacturing, Image processing, Lithography, Computer simulations, Optics manufacturing, Photomasks, Design for manufacturability, Image quality

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Proceedings Article | 15 March 2006 Paper

Alignment performance monitoring for ASML systems

Woong-Jae Chung, Vlad Temchenko, Tarja Hauck, Sebastian Schmidt

Proceedings Volume 6155, 61550G (2006) https://doi.org/10.1117/12.640414

KEYWORDS: Optical alignment, Chemical mechanical planarization, Semiconducting wafers, Overlay metrology, Signal processing, Data storage, Control systems, Time metrology, Logic, Semiconductors

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In today's semiconductor industry downscaling of the IC design puts a stringent requirement on pattern overlay control. Tighter overlay requirements lead to exceedingly higher rework rates, meaning additional costs to manufacturing. Better alignment control became a target of engineering efforts to decrease rework rate for high-end technologies. Overlay performance is influenced by known parameters such as "Shift, Scaling, Rotation, etc", and unknown parameters defined as "Process Induced Variation", which are difficult to control by means of a process automation system. In reality, this process-induced variation leads to a strong wafer to wafer, or lot to lot variation, which are not easy to detect in the mass-production environment which uses sampling overlay measurements for only several wafers in a lot. An engineering task of finding and correcting a root cause for Process Induced Variations of overlay performance will be greatly simplified if the unknown parameters could be tracked for each wafer. This paper introduces an alignment performance monitoring method based on analysis of automatically generated "AWE" files for ASML scanner systems. Because "AWE" files include alignment results for each aligned wafer, it is possible to use them for monitoring, controlling and correcting the causes of "process induced" overlay performance without requiring extra measurement time. Since "AWE" files include alignment information for different alignment marks, it is also possible to select and optimize the best alignment recipe for each alignment strategy. Several case studies provided in our paper will demonstrate how AWE file analysis can be used to assist engineer in interpreting pattern alignment data. Since implementing our alignment data monitoring method, we were able to achieve significant improvement of alignment and overlay performance without additional overlay measurement time. We also noticed that the rework rate coming from alignment went down and stabilized at quite satisfactory level.

Proceedings Article | 10 March 2006 Paper

Process influence study on optical model generation during model-based OPC development

ChinTeong Lim, Vlad Temchenko, Woong-Jae Chung, Dave Wallis, Robert Wildfeuer, Uta Mierau, Sebastian Schmidt, Martin Niehoff

Proceedings Volume 6155, 615503 (2006) https://doi.org/10.1117/12.655801

KEYWORDS: Data modeling, Calibration, Photoresist processing, Optical proximity correction, Process modeling, Optical calibration, Diffusion, Coherence (optics), Statistical modeling, Model-based design

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Proceedings Article | 15 December 2003 Paper

Nondestructive in-line monitoring method for diffusion process control in InP

Yahong Qian, Chris Pawlowicz, Vlad Temchenko, Christina Elliott, Andrew Woodard, Tedeusz Bryskiewicz, Kim Kirkwood, Kevin Hewitt

Proceedings Volume 5260, (2003) https://doi.org/10.1117/12.543541

KEYWORDS: Diffusion, Semiconducting wafers, Cadmium, Diodes, Silicon, Nondestructive evaluation, Avalanche photodetectors, Avalanche photodiodes, Process control, Polarons

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Showing 5 of 10 publications

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